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was established in 2000 at Ioffe Physico-Technical Institute.
Laboratory structure:
MBE group - III-As and Si growth
IIIN group - III-N materials growth and research
Optical group - characterization
Laboratory Officers
Head: Zhores I. Alferov
Deputy Head: Victor M. Ustinov
Deputy Head: Nikolai N. Ledentsov
Executive Secretary: Wsevolod V. Lundin
Economic Secretary: Julia G. Bekman
Research areas:
- physics and technology (MBE, MOCVD) of silicon and III-V semiconductor heterostructures (quantum wells, quantum dots)
- electron materials science and characterization
- optoelectronics, nanoelectronics (low-dimensional heterostructures)
- semiconductor laser diodes, photodetectors, power and high speed semiconductor devices
- postgrowth processing of semiconductors devices
Staff: 28 researches, including 6 Doctors and 12 Candidates of Sciences
Contact information
Laboratory list of publications
Laboratory awards
Laboratory photo gallery
Russian version 
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