Scientific Award of employees of the
Laboratory of Physics of Semiconductor Heterostructures
2018, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light-emitting diodes with monolithic active region based on III-N heterostructures”, Tsatsulnikov A.F., Lundin W.V., Zavarin E.E., Nikolaev A.E., Sakharov A.V., Arteev D.S.
2016, Diploma for the best presentation of “InAlN/AlN/GaN heterostructures for high electron mobility transistors” at the 3rd International School and Conference Saint Petersburg Open 2016 Optoelectronics, Photonics, Engineering and Nanostructures, Usov S.O.
2015, Ioffe Institute Award for work “Control of the mode content of the emission of the semiconductor lasers with wide aperture”, Gordeev N.Yu., Payusov A.S., Shernyakov Yu.M., Kalyuzhny N.A., Mintairov S.A.,
Maksimov M.V.
2015, Certificate of Outstanding Contribution in Reviewing from Journal of Crystal Growth, Lundin W.V.
2011, Diploma of the 8th All-Russian Conference All-Russian Conference “Gallium, aluminum and indium nitrides” for the best report of a young scientist, Rozhavskaya M.M.
2009, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light-emitting diodes based on gallium nitride, emitting in the visible range”, Tsatsulnikov A.F., Lundin W.V., Zavarin E.E., Nikolaev A.E., Sakharov A.V., Usov S.O.
2009, Award of the St. Petersburg State University “For teaching skill”, Dubrovskii V.G.
2009, Best young scientist award of Ioffe Institute “Photoelectric converters based on AlGaAs/GaAs with array of InGaAs quantum dots”, Nadtochiy A.M., Shatalina E.S., Kaluzhniy N.A., Mintairov S.A.
2008, Ioffe Institute Award for work “Giant spin polarization of electrons in the semiconductor, caused by spin-dependent recombination”, Kalevich V.K., Ivchenko E.L., Shiryaev A.Yu., Afanasyev M.M., Egorov A.Yu., Ustinov V.M.
2008, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Role of the hydrogen in MOVPE process of group III nitrides”, Tsatsulnikov A.F., Lundin W.V., Zavarin E.E., Nikolaev A.E., Sakharov A.V., Sinitsyn M.A.
2006, Award of the Centre of Nanoheterostructures of Ioffe Institute for the best work, Dubrovskii V.G.
2001, Best Paper Award, "Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation", IEEE Journal of Quantum Electronics USA. M.V. Maximov, N.N. Ledenstov, D. Bimberg, L.V. Asryan, Y.M. Shernyakov, A.F. Tsatsul'nikov, I.N. Kaiander, V.V. Nikolaev, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, A.E. Zhukov, Z.I. Alferov, "Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation", IEEE Journal of Quantum Electronics, Vol. 37, № 5. P. 676-683. (2001), DOI: https://doi.org/10.1109/3.918581.
2000, The main award of the “MAIK Nauka/Interperiodica” (Pleiades Publishing, Inc.) publishing, Ustinov V.M.
1999, Ioffe Institute Award for work "Multilayer structures in the InGaN/GaN/AlGaN system and surface-emitting devices based on them", Usikov A.S., Krestnikov I.L., Lundin W.V., Sakharov A. V., Tsatsulnikov A.F., Ledentsov N.N.