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Ioffe Institute

Centre of Nanoheterostructures

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Laboratory of Physics of Semiconductor Heterostructures

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Overview

Staff members

Publications

Awards

Events

Contacts

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Usov Sergei Olegovich
Ph.D.
juniour researcher
Phone:  +7 (812) 297-68-66
E-mail:  S.Usov@mail.ioffe.ru

Birthplace:
1981, St. Petersburg (Leningrad), Russia.

Scientific degree:
Ph.D., 2016
“Heterostructures for visible range light-emitting diodes and high electron mobility transistors based on quantum sized layers InGaN, InAlN and short-period superlattices InGaN/GaN”.
The thesis was defended at the Ioffe Institute.

Current position:
Juniour researcher

Work experience:

Education:

Scientific awards:

Research interests:

  Experimental and theoretical investigations of the structural, optical, and electrical properties of quantum-sized semiconductor heterostructures based on InAlGaN material systems grown by metalorganic vapour-phase epitaxy (MOVPE). Investigations of the spectral characteristics of InGaN/GaN light-emitting diodes and lasers emitting in visible range and white light sources based on them. Studying of structural and electrophysical properties of InAlN/AlN/GaN and AlGaN/AlN/GaN heterostructures with AlGaN and InAlN barrier layers for high electron mobility transistors (HEMT).

Patents:

Publications:
Author and co-author of more, than 80 publications in leading Russian and international scientific journals and proceedings of the All-Russian and international conferences and symposia.
Including publications indexed by WoS 28 and Scopus 38.
h-index of WoS 6 (november 2018).
The publication list can be found at
http://www.researcherid.com/rid/A-8685-2014