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| Breakdown field | ≈(2÷5)·105 V/cm | Ga0.47In0.53AsyP1-y; 300K |
| Mobility electrons | ≤(5400-7750y+14400y2) cm2 V-1s-1 | |
| Mobility holes | ≤200-400y+500y2 cm2 V-1s-1 | |
| Diffusion coefficient electrons | ≤130-190y+360y2 cm2/s | |
| Diffusion coefficient holes | ≤5-10y+12.5y2 cm2/s | |
| Electron thermal velocity | (3.9+1.6y)·105 m/s | |
| Hole thermal velocity | (1.7+0.3y)·105 m/s |
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