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Electron mobility versus alloy composition parameter y for GaxIn1-xAsyP1-y lattice-matched to InP. T=300 K.
The experimental points correspond to samples with electron concentration no=(1÷5)·1016 cm-3.
Full curve shows calculations for no=1015 cm-3.
((Pearsall (1982)). |
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Electron mobility versus temperature for GaxIn1-xAsyP1-y alloys lattice-matched to InP.
Electron concentration no=(1÷5)·1016 cm-3.
1. - y=0.31
2. - y=0.50
3. - y=0.91
(Pearsall (1982)). |
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Electron Hall mobility versus electron concentration for three GaxIn1-xAsyP1-y alloy compositions lattice-matched to InP. T=300 K
1. - y=0.9 (λ=1.55µm)
2. - y=0.6 (λ=1.3µm, circles) and
y=0.3 (λ=1.1µ, squares).
(Tappura (1993)). |
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Electron Hall mobility versus electron concentration for three GaxIn1-xAsyP1-y alloy compositions lattice-matched to InP. T=77 K
1. - y=0.9 (λ=1.55µm)
2. - y=0.3 (λ=1.3 µm)
3. - y=0.6 (λ=1.3 µm)
(Tappura (1993)). |
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Hall factor for n-type Ga0.47In0.53As (y=1) versus temperature.
1. - no=1015 cm-3;
2. - no=1017 cm-3.
(Pearsall (1982)). |
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Hole mobility versus alloy composition parameter y for GaxIn1-xAsyP1-y lattice-matched to InP. T=300 K.
1. - po=4·1016 cm-3;
2. - po=2·1018 cm-3.
(Pearsall (1982)). |
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Hole mobility versus temperature for GaxIn1-xAsyP1-y lattice-matched to InP.
1. - y=0.64
2. - y=0.8
3. - y=0.91
(Hayes et al. (1982)). |
