(Osaka et al. (1984)).
(Takanashi and Horikoshi (1979)).
(Pearsall (1982)).
(Pearsall (1982)).
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Field dependence of electron (αi) and hole (βi) ionization coefficients for Ga0.33In0.67As0.7P0.3. T=300 K. (Osaka et al. (1984)). |
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Field dependence of electron (αi) and hole (βi) ionization coefficients for Ga0.11In0.89As0.74P0.26. T=300 K. (Takanashi and Horikoshi (1979)). |
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Calculated donor concentration for the avalanche-Zener breakdown transition as a function of y for GaInAsP alloys lattice-matched to InP. T=300 K. (Pearsall (1982)). |
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Calculated avalanche breakdown voltage for InP (y=0) and Ga0.47In0.53As (y=1) abrupt p-n junctions. T=300 K. (Pearsall (1982)). |
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