/
 |
Arteev Dmitri Sergeevich |
Birthplace:
1992, Inta, Russia.
Scientific degree:
Master degree, 2016
Master degree, "Influence of design and growth conditions of indium-aluminum-gallium-nitrogen green spectral range light-emitting diode structures on their properties"
Current position:
Juniour researcher
Work experience:
2015 - present time, Ioffe Institute.
2015 - present time, Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS.
Education:
2010 - 2014 – bachelor degree in Saint Petersburg Electrotechnical University ETU “LETI”, Ioffe Institute education department of Optoelectronics.
2014 - 2016 – master degree in Saint Petersburg Electrotechnical University ETU “LETI”, Ioffe Institute education department of Optoelectronics.
2016 – present time – Postgraduated course in Ioffe Institute.
Scientific awards:
2018, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light emitting diodes with monolithic active region based on III-N heterostructures”.
Research interests:
Nanoheterostructures based on the InAlGaN materials system grown by MOVPE technique; Light emitting diodes based on InGaN/GaN heterostructures, emitting in visible range, and white light sources with a monolithic active region; InAlN/GaN and AlGaN/GaN heterostructures for conductive distributed Bragg reflectors and high electron mobility transistors (HEMTs); Numerical simulation of and LEDs, laser diodes and HEMTs based on the InAlGaN semiconductor nanostructures.
Publications:
Author and co-author of 8 publications in leading Russian and international scientific journals and proceedings of the All-Russian and international conferences and symposia.
Including publications indexed by WoS 1 and Scopus 3.
The publication list can be found at
http://www.researcherid.com/rid/P-2129-2017
