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Rodin Sergey Nikolaevich |
Birthplace:
1977, St. Petersburg (Leningrad), Russia.
Current position:
Researcher
Work experience:
2003 - present time, Ioffe Institute.
Education:
1994 - 2000 – Leningrad Electrical Engineering Institute (Saint Petersburg Electrotechnical University ETU "LETI"), Master degree in “Electronics and microelectronics”.
Research interests:
Development of technology and equipment for III-N MOVPE;
InGaN/GaN light-emitting diodes of the blue, green-yellow and orange ranges and white light sources;
GaN whiskers grown by MOVPE;
High electron mobility transistors based on AlInN/AlN/GaN and AlGaN/AlN/GaN heterostructures;
Distributed Bragg reflectors based on AlGaN/GaN and InAlN/GaN heterostructures;
Growth of GaN layers on polar and semipolar planes of sapphire substrates;
Ultrathin Si3N4 passivation layers deposited in the same MOVPE processes.
Selective area epitaxy of the GaN-based structures;
Investigations of doping of the (Al)GaN layers by Si, Mg, Zn, Fe, C atoms during MOVPE growth;
Over 10 years of experience in the field of synthesis technology and investigations of physical properties of the heterostructures based on А3В5 different material systems and semiconductor devices based the heterostructures.
Publications:
Author and co-author of 25 publications in leading Russian and international scientific journals and proceedings of the All-Russian and international conferences and symposia.
Including publications indexed by Scopus 14.
h-index of Scopus 6 (november 2018).
The publication list can be found at
https://www.scopus.com/authid/
