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Sakharov Alexey Valentinovich |
Birthplace:
1974, St. Petersburg (Leningrad), Russia.
Scientific degree:
Ph.D., 2000
“Optical properties of III-nitride based layers and heterostructures”
The thesis was defended at the Ioffe Institute.
Current position:
Senior researcher
Work experience:
1996 - present time, Ioffe Institute.
1998 - 2004, visiting scientist in Technical University of Berlin, Germany, and Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.C. (3 times).
1999 - present time, Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS.
2003 - 2010, Academic University, SPbAU RAS.
Education:
1991 - 1996 – graduated with honors from the Physico-Technical Faculty (Department of Solid State Electronics) of St.-Petersburg State Technical University.
Scientific awards:
1999, Ioffe Institute Award for work “Exciton optical lattices in the InGaN quantum wells”.
2008, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Role of the hydrogen in MOVPE process of group III nitrides”.
2009, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light-emitting diodes based on gallium nitride, emitting in the visible range”.
2013, Ioffe Institute Award for work “Exciton optical lattices in the InGaN quantum wells”.
2018, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light emitting diodes with monolithic active region based on III-N heterostructures”.
Membership in the scientific societies and editorial board of the journals:
Program Committee secretary of the All-Russian Conference “Gallium, aluminum and indium nitrides”.
Program Committee member of the All-Russian Conference “Gallium, aluminum and indium nitrides” (2010, 2011, 2013).
Research interests:
Physical properties of the quantum-sized heterostructures based on InAlGaN and InAlGaAs materials systems. Optical properties of the light-emitting diodes and lasers emitting in the visible and near IR range. Investigation of the structural and electrophysical properties of InAlN/AlN/GaN and AlGaN/AlN/GaN heterostructures for high electron mobility transistors (HEMT).
Teaching:
2016 - present time - Ph.D. student academic advising at Ioffe Institute.
Patents:
US patent 6993055 “Resonant cavity device array for WDM application and the fabrication method of the same”;
RU № 2504048 «Semiconductor electroluminescent emitter»;
RU № 102849 «Light-emitting crystal»;
RU № 119165 «Semiconductor light-emitting heterostructure (variants)»;
RU № 124441 «Semiconductor electroluminescent emitter»;
RU № 2371806 «The method for producing nitride semiconductor and nitride semiconductor device of p-type»;
RU № 2369942 «Light-emitting device based on nitride semiconductor»;
RU № 2426197 «Nitride semiconductor device»;
RU № 2650352 «Device for second harmonic generation of optical emission»;
RU № 2650597 «Device for second harmonic generation of optical emission»;
RU № 2642472 «Device for second harmonic generation of optical emission»;
RU № 169283 «Heterostructure field-effect transistor based on InGaAlN/As»;
RU № 169284 «Heterostructure field effect transistor»;
Publications:
Author and co-author of more, than 300 publications in leading Russian and international scientific journals and proceedings of the All-Russian and international conferences and symposia.
Including publications indexed by WoS 134 and Scopus 190.
h-index of WoS 17 (november 2018).
The publication list can be found at
http://www.researcherid.com/rid/A-9250-2014
