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Zavarin Evgenii Evgenievich |
Birthplace:
1975, St. Petersburg (Leningrad), Russia.
Scientific degree:
Ph.D., 2008
“Investigations of the nature of the gas-phase epitaxy process of the GaN and AlGaN layers from the metal-organic compounds and optimization of the epitaxial growth on sapphire and SiC substrates for device applications”
The thesis was defended at the Ioffe Institute.
Current position:
Senior researcher
Work experience:
1995 - present time, Ioffe Institute.
2004 - present time, Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS.
Education:
1992 - 1996 – Bachelor degree, Saint Petersburg Electrotechnical University ETU "LETI", Ioffe Institute education department of Optoelectronics. The title of the bachelor work: „Growth of GaN epilayers by chloride epitaxy“.
1996 - 1998 – Master degree (Master of science and technology), Saint Petersburg Electrotechnical University ETU "LETI", Ioffe Institute education department of Optoelectronics. The title of the master theses ”Growth of GaN epilayers on amorphous substrates by chloride epitaxy”.
1998 - 2001 – Postgraduated course at Leningrad Electrical Engineering Institute (Saint Petersburg Electrotechnical University ETU "LETI"), Ioffe Institute education department. The subject of the study was devoted to the development of MOCVD technology of GaN and related compounds.
Scientific awards:
2008, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Role of the hydrogen in MOVPE process of group III nitrides”.
2009, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light-emitting diodes based on gallium nitride, emitting in the visible range”.
2013, Ioffe Institute Award for work “Exciton optical lattices in the InGaN quantum wells”.
2018, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light emitting diodes with monolithic active region based on III-N heterostructures”.
Research interests:
Development of technology and equipment for III-N MOVPE.
InGaN/GaN light-emitting diodes of the blue, green-yellow and orange ranges and white light sources;
High electron mobility transistors based on AlInN/AlN/GaN and AlGaN/AlN/GaN heterostructures;
Distributed Bragg reflectors based on AlGaN/GaN and InAlN/GaN heterostructures;
Selective area epitaxy of the GaN-based structures;
Doping of the (Al)GaN layers by Si, Mg, Zn, Fe, C atoms;
Over 20 years of experience in the field of development of technology and equipment for semiconductor III-N heterostructures growth by MOVPE epitaxy method;
Design and manufacturing of III-N MOVPE system;
Industrial automation of III-N MOVPE system design including PLCs, remote I/O, industrial networks, sensors, VFDs, soft starters, and SCADA systems; integrating systems with Modbus, ProfiBus, Ethernet/IP, DeviceNet industrial protocols; implementing discrete, batch or continuous process control with IEC-61131-3 and other programming languages;
Administrate computer network (Windows NT server, windows domain, Linux file server);
Programming user interface and complex hardware control programs by DELPHI language;
Patents:
RU № 2504048 «Semiconductor electroluminescent emitter»;
RU № 102849 «Light-emitting crystal»;
RU № 119165 «Semiconductor light-emitting heterostructure (variants)»;
RU № 124441 «Semiconductor electroluminescent emitter»;
RU № 2371806 «The method for producing nitride semiconductor and nitride semiconductor device of p-type»;
RU № 2369942 «Light-emitting device based on nitride semiconductor»;
RU № 2426197 «Nitride semiconductor device»;
RU № 169283 «Heterostructure field-effect transistor based on InGaAlN/As»;
RU № 169284 «Heterostructure field effect transistor»;
RU № 2673515 «Method to supply of carrying gases into the reactor in order to growth epitaxial structures based on metals of group III nitride and device for the implementation»;
Publications:
Author and co-author of more, than 150 publications in leading Russian and international scientific journals and proceedings of the All-Russian and international conferences and symposia.
Including publications indexed by WoS 94 and Scopus 125.
h-index of WoS 13 (november 2018).
The publication list can be found at
http://www.researcherid.com/rid/B-2419-2014
