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The group of MOVPE epitaxy and investigations of the properties of nano-heterostructures based on group III nitrides
Publications list
| All | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 |
| 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 |
| 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 |
| Patents |
G. Pozina, A.R. Gubaydullin, M.I. Mitrofanov, M.A. Kaliteevski, I.V. Levitskii, G.V. Voznyuk, E.E. Tatarinov, V.P. Evtikhiev, S.N. Rodin, V.N. Kaliteevskiy, L.S. Chechurin Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy // Scientific Reports. 2018. - V.8. №1. - P. 7218.
DOI: 10.1038/s41598-018-25647-7.
M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevski, V. P. Evtikhiev Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching // Semiconductors. 2018. - V.52. №7. - P. 954-956.
DOI: 10.1134/S1063782618070151.
Investigation of the statistical broadening in the InGaN solid solutions / D.S. Arteev, A.V. Sakharov, E.E. Zavarin, W.V. Lundin, A.N. Smirnov, V.Yu. Davydov, M.A. Yagovkina, S.O. Usov, A.F. Tsatsulnikov // Proceedings of international conference Physics.SPb (St. Petersburg, 23-25 October 2018). - St. Petersburg, 2018.
Arteev D.S., Sakharov A.V., Lundin W.V., Zavarin E.E., Usov S.O., Chaldyshev V.V., Bolshakov A.S., Yagovkina M.A., Tsatsulnikov A.F., Investigation of Statistical Broadening in InGaN Alloys // Journal of Physics: Conference Series. 2018. - V. 1135. - P. 012050/1-6.
DOI: 10.1088/1742-6596/1135/1/012050.
Poltavtsev S.V., Solovev I.A., Akimov I.A., Chaldyshev V.V., Lundin W.V., Sakharov A.V., Tsatsulnikov A.F., Yakovlev D.R., Bayer M. Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells // Physical Review B. 2018. - V. 98. №1. - P. 195315.
DOI: 10.1103/PhysRevB.98.195315.
The application of the artificial neural networks for prediction of the parameters of the AlGaN epitaxial layers grown by MOVPE eptaxy / D.S. Arteev, A.V. Sakharov, W.V. Lundin, A.E. Nikolaev, A.F. Tsatsulnikov // Proceedings of the 20th All-Russian Youth Conference on the Physics of Semiconductors and Nanostructures, (St. Petersburg, 26-30 November 2018). - St. Petersburg, 2018. - P. 13.
The equipment and technology for epitaxial growth of AlGaInN heterostructures for transistors by MOVPE epitaxy method / А.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, D.A. Zakheim, A.E. Nikolaev, V.M. Ustinov // Abstracts of the 1st International Scientific and Technical Conference "OPTO-, MICRO- and UHF-ELECTRONICS - 2018", (Minsk, Belarus, October 22–26, 2018). - Minsk, 2018. - p. 66-69.
Deposition of the Si3N4 and Si3N4-GaN and Si3N4-AlN solid solutions for electronic applications in the MOVPE epitaxy system / A.V. Sakharov, E.E. Zavarin, V.V. Lundin, A.E. Nikolaev, S.N. Rodin, TB Popova, M.V. Zamoryanskaya, M.A. Yagovkina, S.O. Usov, A.F. Tsatsulnikov, V.G. Tikhomirov, A.C. Evseenkov / Proceedings of the 1st International scientific and technical conference "OPTO-, MICRO- and MICROWAVE –ELECTRONICS – 2018», (Minsk, Belarus, 22–26 October, 2018). – Minsk, 2018. – PP. 90-93.
Lundin W.V., Zavarin E.E., Sakharov A.V., Zakheim D.A., Davydov V.Yu., Smirnov A.N., Eliseyev I.A., Yagovkina M.A., Brunkov P.N., Lundina E.Yu., Markov L.K., Tsatsulnikov A.F. Growth of III-N/graphene heterostructures in single vapor phase epitaxial process // Journal of Crystal Growth. 2018. - V. 504. - P. 1-6.
DOI: 10.1016/j.jcrysgro.2018.09.017.
Study of growth conditions effect on GaN doping with carbon from propane and methane / W.V. Lundin, E.E. Zavarin, A.E. Nikolaev, A.V. Sakharov, D.Yu. Kazantsev, B.Ya. Ber, A.F. Tsatsulnikov // Proceedings of IC MOVPE-XIX (Nara, Japan, 3-8 June 2018).
Study of silicon nitride deposition in III-N MOVPE reactors / W.V. Lundin, S.N. Rodin, E.E. Zavarin, A.V. Sakharov, A.E.Nikolaev, A.F. Tsatsulnikov // Proceedings of IC MOVPE-XIX (Nara, Japan, 3-8 June 2018).
Carrier Redistribution in Blue-Cyan InGaN Dichromatic Light-Emitting Diodes / D.S. Arteev, A.V. Sakharov, A.E. Nikolaev, S.O. Usov, W.V. Lundin, A.F. Tsatsulnikov / Proceedings of the International Conference Laser Optics (ICLO) 2018, (St. Petersburg, 4-8 June 2018). – St. Petersburg, 2018 – p. 134-134.
DOI: 10.1109/LO.2018.8435734.
Zakheim D.A., Lundin W.V., Sakharov A.V., Zavarin E.E., Brunkov P.N., Lundina E.Y., Tsatsulnikov A.F., Karpov S.Yu. Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride // Semicondor Science and Technology. 2018. - V.33. №11. - P. 115008/1-8.
DOI: 10.1088/1361-6641/aae242.
Sakharov A.V., Lundin W.V., Nikolaev A.E., Sokolovskii G.S., Tsatsulnikov A.F., Rafailov E.U. Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index // Applied Sciences. 2018. - V.8. №7. - P. 1158/1-8.
DOI: 10.1088/10.3390/app8071158.
Analysis of electroluminescence spectrum of InGaN/GaN light-emitting diode with dual-wavelength emission and mesh-like electrode / I. Khmyrova,Y. Nishidate, J. Kholopova, E.Polushkin, S.Larkin, A.Kovalchuk, A. Tsatsul’nikov, V. Zemlyakov, S. Shapoval / Proceedings of the 26th International Symposium “Nanostructures: Physics and Technology”, (Minsk, Belarus, 18–22 June 2018). – Minsk, 2018 – p. 25-26.
Ultrathin barrier InAlN/GaN heterostructures for HEMTs / A.V. Sakharov,W.V. Lundin, E.E. Zavarin, D.A. Zakheim, S.O. Usov, A.F. Tsatsulnikov, M.A.Yagovkina, P.E. Sim, O.I. Demchenko, N.Y. Kurbanova, L.E. Velikovskiy / Proceedings of 26th Int. Symp. “Nanostructures: Physics and Technology”, (Minsk, Belarus, 18–22 June 2018 г.). – Minsk, 2018. – C. 99-100.
Sakharov A.V., Lundin W.V., Zavarin E.E., Zakheim D.A., Usov S.O., Tsatsulnikov A.F., Yagovkina M.A., Sim P.E., Demchenko O.I., Kurbanova N.Y., Velikovskiy L.E., Ultrathin barrier InAlN/GaN heterostructures for HEMTs // Semiconductors. 2018. - V.52. №14. - P. 1843–1845.
DOI: 10.1134/S1063782618140257.
FIB lithography challenges of Si3N4/GaN mask preparation for selective epitaxy / M.I. Mitrofanov, I.V. Levitskii, G.V. Voznyuk, E.E. Tatarinov, S.N. Rodin, W.V. Lundin, V.P. Evtikhiev, M.N. Mizerov / Proceedings of the 26th International Symposium “Nanostructures: Physics and Technology”, (Minsk, Belarus, 18–22 June 2018). – Minsk, 2018 – p. 157-158.
Lundin W.V., Tsatsulnikov A.F., Rodin S.N., Sakharov A.V., Usov S.O., Mitrofanov M.I., Levitskii I.V., Evtikhiev V.P. Selective epitxial growth of III−N structures using ion beam nanolithography // Semiconductors Vol. 52. №10. 1357–1362 (2018).
DOI: 10.1134/S106378261810007X.
Emtsev V.V., Gushchina E.V., Petrov V.N., Tal’nishnih N.A., Chernyakov A.E., Shabunina E.I., Shmidt N.M., Usikov A.S., Kartashova A.P., Zybin A.A., Kozlovski V.V., Kudoyarov M.F., Saharov A.V., Oganesyan A.G., Poloskin D.S., Lundin V.V. Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System // Semiconductors Vol. 52. №7. 942–949 (2018).
DOI: 10.1134/S1063782618070072.
Lundin V.V., Sakharov A.V., Zavarin E.E., Zakgeim D.A., Nikolaev A.E., Brunkov P.N., Yagovkina M.A., Tsatsul’nikov A.F. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas // Technical Physics Letters Vol. 44. №7. 577–580 (2018).
DOI: 10.1134/S1063785018070106.
Karpov S.Yu., Zakheim D.A., Lundin W, Sakharov A.V., Zavarin E.E., Brunkov P.N., Lundina, E.Yu., Tsatsulnikov A.F. Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts // Semicondor Science and Technology. 2018. - V.33. №2. - P. 025009/1-10.
DOI: 10.1088/1361-6641/aaa603.
Non-radiative coupled donor-acceptor pair recombination in nanostructures based on nitrides and related phenomena / Talnishnikh N.A., Shabunina E.I., Shmidt N.M., Chernyakov A.E., Arteev D.S., Zybin A.A. // Proceedings of International School and Conference “SPb Open 2018” (Saint Petersburg, Russia, 2-5 April, 2018) // Journal of Physics: Conference Series. 2018.
Resonant Bragg structures with GaN/AlGaN Quantum Wells / D.S. Arteev, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, S.O. Usov, V.V. Chaldyshev, A.S. Bolshakov, M.A. Yagovkina, A.F. Tsatsulnikov // Proceedings of international conference Physics.SPb (St. Petersburg, 24-26 October 2017). - St. Petersburg, 2017. - P. 316. // Journal of Physics: Conference Series. 2018. - V. 1038. - P.012119.
DOI: 10.1088/1742-6596/1038/1/012119.
Non-radiative coupled donor-acceptor pair recombination in nanostructures based on nitrides and related phenomena / Talnishnikh N.A., Shabunina E.I., Shmidt N.M., Chernyakov A.E., Arteev D.S., Zybin A.A. // Proceedings of International School and Conference “SPb Open 2018” (Saint Petersburg, Russia, 2-5 April, 2018) // Journal of Physics: Conference Series. 2018.
DOI: 10.1088/1742-6596/1124/4/041023 .
Savchenko, G.M., Dudelev, V.V., Lundin, V.V., Sakharov, A.V., Tsatsul’nikov, A.F., Kognovitskaya, E.A., Losev, S.N., Deryagin, A.G., Kuchinskii, V.I., Averkiev, N.S., Sokolovskii, G.S. Photonic-crystal waveguide for the second-harmonic generation // Physics of the Solid State. 2017. - V.59. №9. - P. 1702-1705.
DOI: 10.1134/S106378341709027X.
Study of silicon nitride deposition in III-N MOVPE reactors / W.V. Lundin, S.N. Rodin, E.E. Zavarin, A.V. Sakharov, M.A. Sinitsyn, A. F. Tsatsulnikov // Proceedings of the 17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), (Grenoble, France, 18-21 June 2017). - Grenoble, 2017.
Carrier transport and emission efficiency in InGaN quantum-dot based LEDs / D. Barettin, M. Auf der Maur, A. Pecchia, A.F. Tsatsulnikov, A.V. Sakharov, W.V. Lundin, A.E. Nikolaev, M. Korytov, N. Cherkashin, M.J. Hytch, S.Yu. Karpov // Proceedings of the International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 26-30 June 2017). - Saint-Petersburg, 2017. – C. 49-50.
Absorption suppression in InGaN/GaN resonant Bragg structures / A.S. Bolshakov, V.V. Chaldyshev, E.E. Zavarin, A.V. Sakharov, W.V. Lundin, A.F. Tsatsulnikov // Proceedings of the International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 26-30 June 2017). - Saint-Petersburg, 2017. – C. 108-109.
High Q Gallium Nitride Microring Resonators / E. Stassen, M. Pu, E. Semenova, E. Zavarin, W. Lundin, K. Yvind // Proceedings of the Conference on Lasers and Electro-Optics Europe / European Quantum Electronics Conference (CLEO/Europe-EQEC), (Munich, Germany, 25-29 June 2017). - Munich, 2017.
DOI: 10.1109/CLEOE-EQEC.2017.8086619.
Mitrofanov M.I., Rodin S.N., Levitskii I.V., Troshkov S.I., Sakharov A.V., Lundin W.V., Evtikhiev V.P. Ga focused ion beam etching of a Si3N4/GaN substrate for submicron selective epitaxy // Journal of Physics: Conference Series. 2017. - V.816. - P.012009/1-5.
Arteev D. S., Sakharov A. V., Nikolaev A. E., Usov S. O., Lundin W. V., Tsatsulnikov A. F., Luminescence peculiarities of InGaN/GaN dichromatic LEDs // Journal of Physics: Conference Series. 2017. - V. 816. - P. 012038/1-7.
DOI: 10.1088/1742-6596/816/1/012038.
Galimov A.I., Shalygin V.A., Moldavskaya M.D., Melentev G.A., Vinnichenko M.Ya., Artemyev A.A., Firsov D.A., Vorobjev L.E., Sakharov A.V., Zavarin E.E., Lundina E.Yu., Lundin W.V. Optical properties of GaN/AlGaN nanostructures in the terahertz frequency range // Journal of Physics: Conference Series. 2017. - V.816. - P.012019/1-8.
DOI: 10.1088/1742-6596/816/1/012019.
Kholopova Y., Khmyrova I. , Larkin S., Zemlyakov V., Egorkin V., Tsatsul'nikov A., Nishidate Y., Shapoval S. Blue-green InGaN/GaN light-emitting diode with mesh-like top metal electrode // Microelectronic Engineering. 2017. - V.174. - P. 80-84.
DOI: 10.1016/j.mee.2017.02.014..
Bolshakov A.S., Chaldyshev V.V., Zavarin E.E., Sakharov A.V., Lundin W.V., Tsatsulnikov A.F., Yagovkina M.A. Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells // Journal of Applied Physics. 2017. - V.121. №13. - P.133101.
DOI: 10.1063/1.4979636.
D. Barettin, M. Auf der Maur, A. di Carlo, A. Pecchia, A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, A.E. Nikolaev, M. Korytov, N. Cherkashin, M.J. Hÿtch, S.Yu. Karpov Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes // Nanotechnology. 2017. - V.28. №27. - P. 275201.
DOI: 10.1088/1361-6528/aa75a8.
D. Barettin, M. Auf der Maur, A. Pecchia, A. Tsatsulnikov, A. Sakharov, W. Lundin, A. Nikolaev, S. Usov, N. Cherkashin, M. Hÿtch, A. Di Carlo, S. Karpov Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes // Nanotechnology. 2017. - V.28. №1. - P.015701.
DOI: 10.1088/0957-4484/28/1/015701.
Lundin W.V., Rodin S.N., Sakharov A.V., Lundina E.Y., Usov S.O., Zadiranov Y.M., Troshkov S.I., Tsatsulnikov A.F. InGaN/GaN light-emitting diode microwires of submillimeter length // Semiconductors. 2017. - V.51. №1. - P.100-103.
DOI: 10.1134/S1063782617010122.
I.E. Titkov, A. Yadav, S.Yu. Karpov, A.V. Sakharov, A. F. Tsatsulnikov, T.J. Slight, A. Gorodetsky, E.U. Rafailov Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode // Laser & Photonics Reviews. 2017. - V.10. №6. - P.1031–1038.
DOI: 10.1002/lpor.201600196.
M.E. Rudinsky, E.V. Yakovlev, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, A.F. Tsatsulnikov, L.E. Velikovskiy Stress-dislocation management in MOVPE of GaN on SiC wafers // Physica Status Solidi (a). 2016. - V. 213. №10. - P. 2759-2763.
DOI: 10.1002/pssa.201600210.
Lundin W.V., Sakharov A.V., Zavarin E.E., Kazantsev D.Yu., Ber B.Ya., Yagovkina M.A., Brunkov P.N., Tsatsulnikov A.F. Study of GaN doping with carbon from propane in a wide range of MOVPE conditions // Journal of Crystal Growth. 2016. - V. 449. - P. 108–113.
DOI: 10.1016/j.jcrysgro.2016.06.002.
A.S. Bolshakov, V.V. Chaldyshev, E.E. Zavarin, A.V. Sakharov, V.V. Lundin, A.F. Tsatsulnikov Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells // Semiconductors. 2016. - V.50. №11. - P. 1431–1434.
DOI: 10.1134/S1063782616110051.
A.F. Tsatsulnikov, V.W. Lundin, E.E. Zavarin, M.A. Yagovkina, A.V. Sakharov, S.O. Usov, V.E. Zemlyakov, V.I. Egorkin, K.A. Bulashevich, S.Yu. Karpov, V.M. Ustinov Effect of the Parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN Heterostructures with a Two-Dimensional Electron Gas on their Electrical Properties and the Characteristics of Transistors on Their Basis // Semiconductors. 2016. - V.50. №10. - P. 1383–1389.
DOI: 10.1134/S1063782616100237.
G. M.Savchenko, V. V.Dudelev, K. K.Soboleva, V. V.Lundin, A. V. Sakharov, E. A.Kognovitskaya, S. N.Losev, A. G.Deryagin, V. I. Kuchinskii, N. S.Averkiev, G. S. Sokolovskii Metamaterial for efficient second harmonic generation // Technical Physics Letters. 2016. - V.42. №20. - P. 1041-1044.
DOI: 10.1134/S1063785016100254.
A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Yagovkina, V. M. Ustinov, N. A.Cherkashin, "Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs", Semiconductors Vol. 50, 1241 (2016).
DOI: 10.1134/S1063782616090232.
Modeling a new geometry for blue-green LEDs:a quantum-dot sandwich / D. Barettin, N. Cherkashin, M. Auf der Maur, A.V. Sakharov, A.E. Nikolaev, A.F. Tsatsulnikov, A. Pecchia, A. di Carlo // Proceedings of the 23th International Symposium. Nanostructures: Physics and Technology (Saint Petersburg, Russia, 27 June – 01 July, 2016).
Growth of III-N/graphene heterostructures in single OVPE/MOVPE epitaxial process / W. Lundin, E. Zavarin , A. Sakharov , V. Davydov , A. Smirnov , D. Zakheim , L. Markov , A. Tsatsulnikov // Proceedings of the 18th International Conference on Metal Organic Vapor Phase Epitaxy (San Diego, California, US, 10-15 July, 2016).
A comprehensive study of growth conditions effect on GaN doping with carbon from propane and its influence on GaN growth process / W. Lundin , E. Zavarin , A. Sakharov , D. Kazantsev , B. Ber , P. Brunkov , M. Yagovkina , A. Lobanova , R. Talalaev , A. Tsatsulnikov // Proceedings of the 18th International Conference on Metal Organic Vapor Phase Epitaxy (San Diego, California, US, 10-15 July, 2016).
V.V. Emtsev, E.E. Zavarin, M.A. Kozlovskii, M.F. Kudoyarov, V.V. Lundin, G.A. Oganesyan, V.N. Petrov, D.S. Poloskin, A.V. Sakharov, S.I. Troshkov, N.M. Shmidt, V.N. V’yuginov, A.A. Zybin, Ya.M. Parnes, S.I. Vidyakin, A.G. Gudkov, A.E. Chernyakov, V.V. Kozlovskii Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel // Technical Physics Letters. 2016. - V.42. №11. - P. 1079-1082.
DOI: 10.1134/S1063785016110031.
G. M.Savchenko, V. V.Dudelev, K. K.Soboleva, V. V.Lundin, A. V. Sakharov, E. A.Kognovitskaya, S. N.Losev, A. G.Deryagin, V. I. Kuchinskii, N. S.Averkiev, G. S. Sokolovskii Metamaterial for efficient second harmonic generation // Technical Physics Letters. 2016. - V.42. №20. - P. 1041-1044.
DOI: 10.1134/S1063785016100254.
V.V. Emtsev, E.E. Zavarin, G.A. Oganesyan, V.N. Petrov, A.V. Sakharov, N.M. Shmidt, V.N. V’yuginov, A.A. Zybin, Ya.M. Parnes, S.I. Vidyakin, A.G. Gudkov, A.E. Chernyakov The Relationship between the Reliability of Transistors with 2D AlGaN/GaN Channel and Organization Type of Nanomaterial // Technical Physics Letters. 2016. - V.42. №7. - P. 701–703.
DOI: 10.1134/S1063785016070075.
W. V. Lundin , E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinitsyn, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsulnikov Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source // Technical Physics Letters. 2016. - V.42. №5. - P. 539-542.
DOI: 10.1134/S106378501605028X.
Metamaterial for the Second Harmonic Generation / G.M. Savchenko, V.V. Dudelev, K.K. Soboleva, V.V. Lundin, A.V. Sakharov, A.G. Deryagin, V.I. Kuchinskii, N.S. Averkiev, G.S. Sokolovskii // Proceedings of International Conference Laser Optics (LO) (St. Petersburg, Russia, 27 June-1 July 2016). – St. Petersburg, 2016. – Vol. 7549748, PP. R338.
DOI: 10.1109/LO.2016.7549748.
Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs / M. Zulonas, I.E. Titkov, A. Yadav, K.A. Fedorova, A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, T. Slight, W. Meredith, E.U. Rafailov // Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (8 March 2016). – 2016. - Proceedings of SPIE V. 9768. - P. 97680N/1-9.
DOI: 10.1117/12.2211046.
W. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, S. I. Troshkov, A. V. Sakharov, A. E. Nikolaev, A. F. Tsatsulnikov The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy // Technical Physics Letters. 2016. - V.42. №4. - P. 431–434.
DOI: 10.1134/S1063785016040192.
InAlN/AlN/GaN heterostructures for high electron mobility transistors / Usov S. O., Sakharov A. V., Tsatsulnikov A. F., Lundin V.W., Zavarin E.E., Nikolaev A.E., Yagovkina M.A., Zemlyakov V.E., Egorkin V.I., Ustinov V.M. // Proceedings of International School and Conference “Saint Petersburg OPEN 2016” (Saint Petersburg, Russia, 28-30 March, 2016) // Journal of Physics: Conference Series. 2016. - V.741. №1. - P. 012164/1-6.
DOI: 10.1088/1742-6596/741/1/012164.
Impact of nanomaterial arrangement on the reliability and the electron mobility in AlGaN/GaN HEMTs / S.I. Vidyakin, A.G. Gudkov, G.A. Oganesyan, V.N. Petrov, A.V. Sakharov, E.I. Shabunina, A.A. Zybin, Ya.M. Parnes // Proceedings of International School and Conference “Saint Petersburg OPEN 2016” (Saint Petersburg, Russia, 28-30 March, 2016) // Journal of Physics: Conference Series. 2016. - V.741. №1. - P. 012172/1-4.
DOI: 10.1088/1742-6596/741/1/012172.
Study of electrical properties of single GaN nanowires grown by MOCVD with a Ti mask / A.A. Vasiliev, A.M. Mozharov, M.M. Rozhavskaya, V.V. Lundin, I.S. Mukhin // Proceedings of International School and Conference “Saint Petersburg OPEN 2016” (Saint Petersburg, Russia, 28-30 March, 2016) // Journal of Physics: Conference Series. 2016. - V.741. №1. - P. 012007/1-4.
DOI: 10.1088/1742-6596/741/1/012007.
Tikhomirov V.G. , Zemlyakov V.E., Volkov V.V., Parnes Y.M., Vyuginov V.N., Lundin W.V., Sakharov A.V., Zavarin E.E., Tsatsulnikov A.F., Cherkashin N.A., Mizerov M.N., Ustinov V.M. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation // Semiconductors. 2016. - V.50. №2. - P. 244-248.
DOI: 10.1134/S1063782616020263.
Karpov S.Yu., Cherkashin N.A., Lundin W.V., Nikolaev A.E., Sakharov A.V., Sinitsin M.A., Usov S.O., Zavarin E.E., Tsatsulnikov A.F. Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency // Physica Status Solidi (a). 2015. - V. 213. №1. - P. 19-29.
DOI: 10.1002/pssa.201532491.
D. V. Pankin, M. B. Smirnov, V. Yu. Davydov, A. N. Smirnov, E. E. Zavarin, W. V. Lundin Elastic strains and delocalized optical phonons in AlN/GaN superlattices // Semiconductors. 2016. - V.50. №8. - P. 1043–1048.
DOI: 10.1134/S1063782616080169.
Realistic model of LED structure with InGaN quantum-dots active region / D. Barettin, M. Auf Der Maur, A. Pecchia, , W. Rodrigues, A.F. Tsatsulnikov, A.V. Sakharov, W.V. Lundin, A.E. Nikolaev, N. Cherkashin, M.J. Hytch, S.Y. Karpov, A. Di Carlo // Proceedings of the EEE-NANO 2015 - 15th International Conference on Nanotechnology (Rome, Italy, 27 – 30 July 2015). – Rome, 2016. – Vol. 7388939, p. 1543-1546.
DOI: 10.1109/NANO.2015.7388939.
Realistic modeling of InGaN quantum dots from experimental results / D. Barettin, M. Auf der Maur, A. Pecchia, W. Rodrigues, A. F. Tsatsulnikov, A.V. Sakharov, N. Cherkashin, M. Korytov, S.Yu. Karpov, A. di Carlo // Proceedings of the 22nd Int. Symp. “Nanostructures: Physics and Technology” (Saint Petersburg, Russia, 23–27 June 2015). – Saint Petersburg, 2016.
Tsatsulnikov A. F., Lundin W. V., Sakharov A. V., Nikolaev A. E., Zavarin E. E., Usov S. O., Yagovkina M. A., Hÿtch M. J., Korytov M., Cherkashin N. Formation of Three-Dimensional Islands in the Active Region of InGaN Based Light Emitting Diodes Using a Growth Interruption Approach // Science of Advanced Materials. 2015. - V.7. - P. 1629-1635.
DOI: 10.1166/sam.2015.2277.
Tsatsulnikov A. F., Lundin W. V., Sakharov A. V., Zavarin E. E., Usov S. O., Nikolaev A. E., Sinitsyn M. A., Cherkashin N. A., Karpov S. Y., Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency // Semiconductors. 2015. - V.49. №11. - P. 1516–1521.
DOI: 10.1134/S1063782615110238.
W.V. Lundin, E.E. Zavarin, M.G. Popov, S.I. Troshkov, A.V. Sakharov, I.P. Smirnova, M.M. Kulagina, V.Yu. Davydov, A.N. Smirnov, A.F. Tsatsulnikov The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy // Technical Physics Letters. 2015. - V.41. №10. - P. 1006–1009.
DOI: 10.1134/S1063785015100247.
Bolshakov A.S., Chaldyshev V.V., Lundin W.V., Sakharov A.V., Tsatsulnikov A.F., Yagovkina M.A., Zavarin E.E. Resonant Bragg structures based on III-nitrides // Journal of materials research. 2015. - V.30. №5. - P. 603-608.
DOI: 10.1557/jmr.2014.397.
S.A. Kukushkin, A.V. Osipov, M.M. Rozhavskaya, A.V. Myasoedov, S.I. Troshkov, V.V. Lundin, L.M. Sorokin, A.F. Tsatsul’nikov Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN // Physics of the Solid State. 2015. - V.57. №9. - P. 1899–1907.
DOI: 10.1134/S1063783415090218.
P.A. Ivanov, A.S. Potapov, A.E. Nikolaev,W.V. Lundin, A.V. Saharov, A.F. Tsatsulnikov, A.V. Afanas’ev, A.A. Romanov, E.V. Osachev Capacitance–voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures // Semiconductors. 2015. - V.49. №8. - P. 1035-1038.
DOI: 10.1134/S1063782615080096.
M.M. Rozhavskaya, W.V. Lundin, S.I. Troshkov, A.F. Tsatsulnikov, V.G. Dubrovskii Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling // Physica Status Solidi (a). 2015. - V.212. №4. - P. 851-854.
DOI: 10.1002/pssa.201431912.
W.V. Lundin, D.V. Davydov, E.E. Zavarin, M.G. Popov, A.V. Sakharov, E.V. Yakovlev, D.S. Bazarevskii, R.A. Talalaev, A.F. Tsatsulnikov, M.N. Mizerov, V.M. Ustinov MOVPE of III-N LED structures with short technological process // Technical Physics Letters. 2015. - V.41. №3. - P. 213-216.
DOI: 10.1134/S1063785015030116.
M.M. Rozhavskaya, W.V. Lundin, E.Yu. Lundina, V.Yu. Davydov, S.I. Troshkov, A.A. Vasilyev, P.N. Brunkov, A.V. Baklanov, A. F. Tsatsulnikov, V.G. Dubrovskii Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film // Journal of Applied Physics. 2015. - V. 117. - P. 024301.
DOI: 10.1063/1.4905427.
V.V. Chaldyshev, A.S. Bolshakov, E.E. Zavarin, A.V. Sakharov, V.V. Lundin, A.F. Tsatsulnikov, M.A. Yagovkina Optical lattices of excitons in InGaN/GaN quantum well systems // Semiconductors. 2015. - V.49. №1. - P. 4-8.
DOI: 10.1134/S1063782615010042.
Fast MOVPE of III-N device heterostructures / W.V. Lundin, D.V. Davydov, E.E. Zavarin, M.G. Popov, A.V. Sakharov, A. F. Tsatsulnikov, E.V. Yakovlev, D.S. Bazarevskiy, R.A.Talalaev // Proceedings of International Conference on MOVPE (Lausanne, Switzerland, 18-22 May, 2014). – Lausanne, 2014.
Optimization of MOVPE of nitride device structures for a wide range process conditions / W.V. Lundin, D.V. Davydov, E.E. Zavarin, M.G. Popov, A.V. Sakharov, S.O.Usov, P.N.Brunkov, V.V. Emtsev, M.A.Yagovkina, B.Ya. Ber, G.A.Oganesyan, D.Yu. Kazantsev, A. F. Tsatsulnikov, E.V. Yakovlev, D.S. Bazarevskiy, R.A.Talalaev // Proceedings of 5th International Symposium on Growth of III-Nitrides (ISGN-5) (Atlanta, GA, USA, 18-22 May, 2014), Invited presentation.
Control of properties of InGaN/GaN structures by growth sequence variation / A.V. Sakharov, N.A. Cherkashin, D.V Davydov, M.N. Korytov, W.V. Lundin, E.V. Lutsenko, A.E. Nikolaev, M.V. Rzheutskii, S.O. Usov, M.A. Yagovkina, E.E. Zavarin, A.F.Tsatsulnikov // Proceedings of IWN 2014 (Wroclav, Poland, 24-30 August, 2014).
Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED / I.E. Titkov, A Yadav, VL Zerova, M Zulonas, AF Tsatsulnikov, WV Lundin, AV Sakharov, EU Rafailov // Proceedings of Conference on Gallium Nitride Materials and Devices IX (San Francisco, CA, USA, 03-06 Febrary, 2014) // GALLIUM NITRIDE MATERIALS AND DEVICES IX (Book Series: Proceedings of SPIE). 2014. - V. 8986. - P. 89862A.
DOI: 10.1117/12.2040086.
Lundin W.V., Nikolaev A.E., Sakharov A.V., Tsatsulnikov A.F. Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions // Technical Physics Letters. 2014. - V.40. №5. - P. 365-368.
DOI: 10.1134/S1063785014050095.
M. M. Rozhavskaya, W. V. Lundin, E. Yu. Lundina, A. V. Sakharov, S. I. Troshkov, A. N. Smirnov, V. Yu. Davydov Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer // Technical Physics Letters. 2014. - V.40. №5. - P. 372-374.
DOI: 10.1134/S1063785014050125.
V.S. Kopp, V.M. Kaganer, M.V. Baidakova, W.V. Lundin, A.E. Nikolaev, E.V. Verkhovtceva, M.A. Yagovkina, N. Cherkashin X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy // Journal of Applied Physics. 2014. - V. 115. - P. 073507.
DOI: 10.1063/1.4865502.
Lundin W. V., Nikolaev A. E., Sakharov A. V., Usov S. O., Zavarin E. E., Brunkov P. N., Yagovkina M. A., Cherkashin N. A., Tsatsulnikov A. F., Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers // Semiconductors. 2014. - V.48. №1. - P. 53-57.
DOI: 10.1134/S1063782614010199.
M.M. Rozhavskaya, W.V. Lundin, A.V. Sakharov Synthesis of an LED structure on the (112¯0) and (0001) faces of mesa stripes grown by selective-area epitaxy // Technical Physics Letters. 2014. - V.40. №1. - P. 18-20.
DOI: 10.1134/S1063785014010106.
Fast MOVPE of III-nitride Materials at Super-atmospheric Pressure in Horizontal Flow Reactor / W.V. Lundin, D.V. Davydov, E.E. Zavarin, A.E. Nikolaev, M.A. Sinitsyn, M.G. Popov, A.V. Sakharov, A. F. Tsatsulnikov, M.N. Mizerov, V.M. Ustinov, E.V. Yakovlev, D.S. Bazarevskiy, A.V. Lobanova, R.A.Talalaev // Proceedings of EWMOVPE 2013 (Aachen, Germany, 2-5 June, 2013).
Influence of sapphire substrate backside coating on InGaN/GaN growth / A.V. Sakharov, W.V. Lundin, E.Yu. Lundina, S.O.Usov, A.E. Nikolaev, A.F. Tsatsulnikov // Proceedings of EWMOVPE 2013 (Aachen, Germany, 2-5 June, 2013).
M.M. Rozhavskaya, W.V. Lundin, A.E. Nikolaev, E.E. Zavarin, S.I. Troshkov, P.N. Brunkov, A.F. Tsatsulnikov Selective area growth of GaN on r-plane sapphire by MOCVD, Proceedings of the Fourth International Symposium on Growth of III-Nitrides (ISGN4) // Physica Status Solidi (c). 2013. - V. 10(3). - P. 373–376.
DOI: 10.1002/pssc.201200545.
M.M. Rozhavskaya, W.V. Lundin, E.E. Zavarin, E.Yu. Lundina, S.I. Troshkov, V.Yu. Davydov, M.A. Yagovkina, P.N. Brunkov, A.F. Tsatsulnikov Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate, Proceedings of the Fourth International Symposium on Growth of III-Nitrides (ISGN4) // Physica Status Solidi (c). 2013. - V. 10(3). - P. 441–444.
DOI: 10.1002/pssc.201200630.
V. Yu. Davydov, E. M. Roginskii, A. N. Smirnov, Yu. E. Kitaev, M. A. Yagovkina, R. N. Kyutt, M. M. Rozhavskaya, E. E. Zavarin, W. V. Lundin and M. B. Smirnov, Lattice dynamics of short-period AlN/GaN superlattices: Theory and experiment, Proceedings of the Fourth International Symposium on Growth of III-Nitrides (ISGN4) // Physica Status Solidi (a). 2013. - V. 210(3). - P. 484–487.
DOI: 10.1002/pssa.201200700.
W.V. Lundin, A.E. Nikolaev, M.M. Rozhavskaya, E.E.Zavarin, A.V. Sakharov, S.I. Troshkov, M.A. Yagovkina, A.F. Tsatsulnikov Fast AlGaN growth in a whole composition range in planetary reactor, Proceedings of the IC MOVPE XVI, May 20-25 2012 (Busan, Korea, 20-25 May, 2013) // Journal of Crystal Growth. 2013. - V. 370. - P. 7-11.
DOI: 10.1016/j.jcrysgro.2012.09.056.
M.M. Rozhavskaya, W.V. Lundin, E.E. Zavarin, S.I. Troshkov, P.N. Brunkov, A.F. Tsatsulnikov Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN // Semiconductors. 2013. - V.47. №3. - P. 437-442.
DOI: 10.1134/S1063782613030226.
D.Yu. Protasov, T.V. Malin, A.V. Tikhonov, A.F. Tsatsulnikov, K.S. Zhuravlev Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas // Semiconductors. 2013. - V.47. №1. - P. 33–44.
DOI: 10.1134/S1063782613010181.
Bol'shakov A.S., Chaldyshev V.V., Zavarin E.E., Sakharov A.V., Lundin W.V., Tsatsul'nikov A.F., Yagovkina M.A. Resonance Bragg structure with double InGaN quantum wells // Physics of the Solid State. 2013. - V.55. №9. - P. 1817-1820.
DOI: 10.1134/S1063783413090059.
E.V. Verkhovtceva, A.E. Nikolaev, A.V. Sakharov, M.A. Yagovkina Strain Relaxation in Multilayer III–N Structures on Si(111) Substrates, Proceedings of the 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Saint-Petersburg, Russia, September 15-20, 2012 (Saint-Petersburg, Russia, 15-20 September, 2012) // Crystallography Reports. 2013. - V. 58. - P. 970–975.
DOI: 10.1134/S1063774513070201.
R.N. Kyutt, M.P. Shcheglov, V.V. Ratnikov, M.A. Yagovkina, V.Yu. Davydov, A.N. Smirnov, M.M. Rozhavskaya, E.E. Zavarin, W.V. Lundin X-Ray Diffraction Study of Short-Period AlN/GaN Superlattices // Crystallography Reports. 2013. - V.58. №7. - P. 953–958.
DOI: 10.1134/S1063774513070109.
a-GaN grown by double-cross ELOG process / W.V. Lundin , E.E. Zavarin, A.E. Nikolaev, M.A. Sinitsyn, A.V. Sakharov, S.O. Usov, S.I. Troshkov, P.N. Brunkov, M.M. Rozhavskaya, A.N.Smirnov, V.Yu.Davidov and A.F. Tsatsulnikov // Proceedings of IC MOVPE XVI 2012 (Busan, Korea, 20-25 May, 2012).
Stimulated Formation of InGaN Quantum Dots by MOCVD (invited) / A. Tsatsulnikov, W. Lundin, A. Nikolaev, A. Sakharov, N. Cherkashin, M. Hytch // Abstracts book of the 4th International Symposium on Growth of III-Nitrides (St. Petersburg, Russia, 16-19 July 2012). – St. Petersburg, 2012.
Peculiarities of fast AlGaN growth in planetary reactor / W.V. Lundin, A.E. Nikolaev, M.M. Rozhavskaya, E.E.Zavarin, A.V. Sakharov, S.I. Troshkov, M.A. Yagovkina, A.F. Tsatsulnikov // Abstracts book of the 4th International Symposium on Growth of III-Nitrides (St. Petersburg, Russia, 16-19 July 2012). – St. Petersburg, 2012.
Structural characterization of short period superlattices GaN/AlN / R. Kyutt, M. Scheglov, V. Ratnikov, V. Davydov, A. Smirnov, M. Yagovkina, M. Rojavskaja, E. Zavarin, W. Lundin // Abstracts book of the 4th International Symposium on Growth of III-Nitrides (St. Petersburg, Russia, 16-19 July 2012). – St. Petersburg, 2012.
Influence of reactor pressure on InGaN/GaN MQW growth and properties / A.V. Sakharov, A.E. Nikolaev, W.V. Lundin, S.O. Usov, E.E. Zavarin, and A.F. Tsatsulnikov // Abstracts book of the 4th International Symposium on Growth of III-Nitrides 2012 (St. Petersburg, Russia, 16-19 July, 2012).
Tsatsulnikov A. F., Lundin W. V., Zavarin E. E., Nikolaev A. E., Sakharov A. V., Rozhavskaya M. M., Usov S. O., Brunkov P. N., Synitsin M. A., Davydov D. V., Mizerov M. N., Cherkashin N. A., Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region // Semiconductors. 2012. - V.46. №10. - P. 1281-1285.
DOI: 10.1134/S1063782612100168.
Tsatsulnikov A. F., Lundin W. V., Zavarin E. E., Sakharov A. V., Musikhin Yu. G., Usov S. O., Mizerov M. N., Cherkashin N. A., InGaN/GaN heterostructures grown by submonolayer deposition // Semiconductors. 2012. - V.46. №10. - P. 1335-1340.
DOI: 10.1134/S106378261210017X.
V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, A. N. Sofronov, G. A. Melentyev, M. Ya. Vinnichenko, V. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A.F. Tsatsul’nikov, Emission of Terahertz Radiation from Selectively Doped AlGaN/GaN Heterostructures under the Heating of Two-Dimensional Electrons by an Electric Field // Bulletin of the Russian Academy of Sciences. Physics. 2012. - V.76. №2. - P. 207–210.
DOI: 10.3103/S1062873812020281.
Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs / A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, V. S. Sizov, A. L. Zakgeim, M. N. Mizerov, N. A. Cherkashin, and M. Hytch // 9th International Conference on Nitride Semiconductors (ICNS-9) (Glasgow, UK, 10-15 July, 2011) // Physica Status Solidi (c). 2012. - V. 9. №3. - P. 774-777.
DOI: 10.1002/pssc.201100339.
W.V. Lundin, A.E Nikolaev, M. Yagovkina, P. Brunkov, M. Rozhavskaya, B.Ya. Ber, D.Yu. Kazantsev, A.F. Tsatsulnikov, A.V. Lobanova, R.A. Talalaev, High growth rate MOVPE of Al(Ga)N in planetary reactor, Proceedings of the 18th American Conference on Crystal Growth and Epitaxy in conjunction with the 15th US Biennial Workshop on Organometallic Vapor Phase Epitaxy, July 31 - August 5, 2011 (Monterey, California, USA, 31 July - 5 August, 2011) // Journal of Crystal Growth. 2013. - V. 352. - P. 209–213.
DOI: 10.1016/j.jcrysgro.2011.11.045.
S.A. Kukushkin, A.V. Osipov, S.G. Zhukov, E.E. Zavarin, W.V. Lundin, M.A. Sinitsyn, M.M. Rozhavskaya, A.F. Tsatsulnikov, S. I. Troshkov, N.A. Feoktistov Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide // Technical Physics Letters. 2012. - V.38. №3. - P. 297-299.
DOI: 10.1134/S1063785012030261.
W. V. Lundin, E. E. Zavarin, M. M. Rozhavskaya, A. E. Nikolaev, V. Sakharov, S. I. Troshkov, M. A. Sinitsyn, D. V. Davydov, M. M. Kulagina and P. N. Brunkov, A. F. Tsatsulnikov Double-cross epitaxial overgrowth of nonpolar gallium nitride layers // Technical Physics Letters. 2012. - V.38. №3. - P. 265-267.
DOI: 10.1134/S1063785012030285.
V. M. Ustinov, A. F. Tsatsulnikov, V. V. Lundin, A. V. Sakharov, A. E. Nikolaev, E. E. Zavarin, A. L. Zakgeim, A. E. Chernyakov, M. N. Mizerov, N. A. Cherkashin, M. Hytch Monolithic White LEDs: Approaches, Technology, Design // Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2012. - V.6. №3. - P. 501–504.
DOI: 10.1134/S1027451012060237.
V.V. Chaldyshev, A.S. Bolshakov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov, M. A. Yagovkina, Taek Kim, Y. Park Optical lattices of InGaN quantum well excitons // Applied Physics Letters. 2011. - V. 99. №25. - P. 251103.
DOI: 10.1063/1.3670499.
High growth rate of Al(Ga)N in planetary reactor / W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, P.N.Brunkov, D.V.Davydov, E.E. Zavarin, M.A.Yagovkina, M.M.Rozhavskaya, M.A.Sinitsyn, M.N.Mizerov, A. F. Tsatsulnikov // Proceedings of the 14th European Workshop on Metalorganic Vapour Phase Epitaxy (Wroclaw, Poland, 5-8 June, 2011) // Booklet of Extended abstracts. 2011. - P. 67. // Journal of Crystal Growth. 2011. - V. 352. №1. - P. 209-213.
DOI: 10.1016/j.jcrysgro.2011.11.045.
W.V. Lundin, E.E. Zavarin, M.M. Rozhavskaya, S.I. Troshkov, A.F. Tsatsulnikov Specific features of gallium nitride selective epitaxy in round windows // Technical Physics Letters. 2011. - V.37. №8. - P. 735-738.
DOI: 10.1134/S1063785011080104.
V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, A. N. Sofronov, G. A. Melentyev, W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A.F. Tsatsulnikov Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field // Journal of Applied Physics. 2011. - V. 76. - P. 073108.
DOI: 10.1063/1.3573489.
Tsatsulnikov A. F., Lundin W. V., Zavarin E.E., Nikolaev A. E., Sakharov A. V., Sizov V. S., Usov S. O., Musikhin Yu. G., Gerthsen D. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them // Semiconductors. 2011. - V.45. №2. - P. 271-276.
DOI: 10.1134/S1063782611020230.
W.V. Lundin, A.V. Sakharov, A.F. Tsatsulnikov, V.M. Ustinov MOVPE of device-oriented wide-band-gap III-N heterostructures // Semicond. Sci. Technol. 2011. - V. 26(1). - P. 014039.
DOI: 10.1088/0268-1242/26/1/014039.
W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, E.E. Zavarin, G.A. Valkovskiy, M.A. Yagovkina, S.O. Usov, N.V. Kryzhanovskaya, V.S. Sizov, P.N. Brunkov, A.L. Zakgeim, A.E. Cherniakov, N.A. Cherkashin, M.J. Hytch, E.V. Yakovlev, D.S. Bazarevskiy, M.M. Rozhavskaya, A.F. Tsatsulnikov, Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice, 15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV) (Hyatt Regency Lake Tahoe Incline Village, Nevada, USA, 23-28 May, 2010) // Journal of Crystal Growth. 2011. - V. 315(1). - P. 267-271.
DOI: 10.1016/j.jcrysgro.2010.09.043.
Terahertz Radiation Emission by Hot Electrons from AlGaN/GaN Heterostructure / V.A. Shalygin, L.E. Vorobjev, D.A. Firsov, A.N. Sofronov, G.A. Melentyev, W.V. Lundin A.E. Nikolaev , A.V. Sakharov, A.F. Tsatsulnikov // Proceedings of the 14th International Symposium Ultrafast Phenomena in Semiconductors (Vilnius, Lithuania, 23-25 August, 2010) // Acta Physica Polonica A. 2011. - V. 119. №2. - P. 241-243.
DOI: 10.12693/APhysPolA.119.241.
InGaN/GaN Short-Period Superlattices: Synthesis, Properties, Applications / A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E .E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V.S. Sizov, A. E. Chernyakov, A. L. Zakgeim, N.A. Cherkashin, M. Hytch // Proceedings of IWN2010 (Florida, USA, 19-24 September, 2010) // Physica Status Solidi (c). 2011. - V. 8. №7 - 8. - P. 2308-2310.
DOI: 10.1002/pssc.201001040.
Optoelectronic structures with InAlN layers grown by MOVPE / A. V. Sakharov, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, S. O. Usov, A. E. Nikolaev, S. I. Troshkov, M. A. Yagovkina, D. V. Davydov, N. A. Cherkashin, M. Hytch J., F. Hue, P. N. Brunkov, A. F. Tsatsulnikov // Proceedings of ICPS2010 (Seoul, Korea, 25-30 July, 2010) // AIP Conf. Proc. 2011. - V. 1399. - P. 107-108.
DOI: 10.1063/1.3666279.
Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs / A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E .E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, A. E. Chernyakov , A. L. Zakgeim , N.A. Cherkashin, M. Hytch // Proceedings of ICPS2010 (Seoul, Korea, 25-30 July, 2010) // AIP Conf. Proc. 2011. - V. 1399. - P. 253-254.
DOI: 10.1063/1.3666350.
A.V. Aladov, E.D. Vasilieva, A.L. Zakgeim, G.V. Itkinson, V.V. Lundin, M.N. Mizerov, V. M. Ustinov, A.F. Tsatsul’nikov On modern high-power LEDs and their lighting application // Light & Engineering (Svetotekhnika). 2010. - V.18. №3. - P. 16-29.
W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, P.N. Brunkov, E.E. Zavarin, A.F. Tsatsulnikov High Growth Rate of AlN in a Planetary MOVPE Reactor // Technical Physics Letters. 2010. - V.36. №12. - P. 1133–1135.
DOI: 10.1134/S1063785010120205.
Lundin W. V., Nikolaev A. E., Sakharov A. V., Zavarin E. E., Usov S. O., Sizov V. S., Zakgeim A. L., Chernyakov A. E., Tsatsul’nikov A. F. High-Efficiency InGaN/GaN/AlGaN Light-Emitting Diodes with Short-Period InGaN/GaN Superlattice for 530–560 nm Range // Technical Physics Letters. 2010. - V.36. №11. - P. 1066-1068.
DOI: 10.1134/S1063785010110283.
V.S. Sizov, V.V. Neploh, A.F. Tsatsulnikov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, A.E. Nikolaev, A.M. Mintairov, J.L. Merz Study of Tunneling Transport of Carriers in Structures with an InGaN/GaN Active Region // Semiconductors. 2010. - V.44. №12. - P. 1567–1575.
DOI: 10.1134/S1063782610120067.
Tsatsul’nikov A.F., Zavarin E.E., Kryzhanovskaya N.V., Lundin W.V., Saharov A.V., Usov S.O., Brunkov P.N., Goncharov V.V., Cherkashin N.A., Hytch M. Formation of Composite InGaN/GaN/InAlN Quantum Dots // Semiconductors. 2010. - V.44. №7. - P. 1338-1341.
DOI: 10.1134/S1063782610100167.
V.S. Sizov, A.F. Tsatsulnikov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, N.A. Cherkashin, M.J. Hÿtch, A.E. Nikolaev, A.M. Mintairov, Yan He, J.L. Merz The Use of Short-Period InGaN/GaN Superlattices in Blue-Region Light-Emitting Diodes // Semiconductors, 2010, vol. 44, №7, pp. 924-930.
DOI: 10.1134/S106378261007016X.
Usov S. O., Zavarin E. E., Tsatsulnikov A. F., Lundin V. V., Sakharov A. V., Nikolaev A. E., Sinitsyn M. A., Troshkov S. I., Ledentsov N. N. Structural and Optical Properties of InAlN/GaN Distributed Bragg Reflectors // Semiconductors, 2010, vol. 44, №7, pp. 949-953.
DOI: 10.1134/S1063782610070201.
Kryzhanovskaya N. V., Lundin W. V., Nikolaev A. E., Tsatsul’nikov A. F., Sakharov A. V., Pavlov M. M., Cherkachin N. A., Hÿtch M. J., Valkovsky G. A., Yagovkina M. A., Usov S. O. Optical and Structural Properties of InGaN/GaN Short-Period Superlattices for the Active Region of Light-Emitting Diodes // Semiconductors. 2010. - V.44. №6. - P. 828-834.
DOI: 10.1134/S1063782610060242.
Tsatsulnikov A. F., Lundin W. V., Sakharov A. V., Zavarin E. E., Usov S. O., Nikolaev A. E., Kryzhanovskaya N. V., Synitsin M. A., Sizov V. S., Zakgeim A. L., Mizerov M. N. A Monolithic White LED with an Active Region Based on InGaN QWs Separated by Short-Period InGaN/GaN Superlattices // Semiconductors. 2010. - V.44. №6. - P. 808-811.
DOI: 10.1134/S1063782610060205.
Lundin W. V., Zavarin E. E., Sinitsyn M. A., Sakharov A. V., Usov S. O., Nikolaev A. E., Davydov D. V., Cherkashin N. A., Tsatsulnikov A. F. Effect of Pressure in the Growth Reactor on the Properties of the Active Region in the InGaN/GaN Light-Emitting Diodes // Semiconductors. 2010. - V.44. №1. - P. 123-129.
DOI: 10.1134/S1063782610010215.
Tsatsulnikov A. F., Lundin W. V., Sakharov A. V. , Zavarin E. E., Usov S. O. , Nikolaev A. E., Cherkashin N. A., Ber B. Ya., Kazantsev D. Yu., Mizerov M. N., Hee Seok Park, M. Hytch, Hue F. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes // Semiconductors. 2010. - V.44. №1. - P. 93-97.
DOI: 10.1134/S1063782610010161.
V.V. Goncharov, M.N. Korytov, P.N. Brunkov, W.V. Lundin, E.E. Zavarin, A.F. Tsatsul’nikov, S.G. Konnikov Study of the Formation of InGaN Quantum Dots on GaN Surface // Bulletin of the Russian Academy of Sciences: Physics. 2009. - V.73. №1. - P. 36–38.
Zavarin E.E.; Sakharov A.V., Lundin W.V., Davydov D.V., Sizov V.S., Brunkov P.N., Goncharov V.V., Tsatsulnikov A.F. Indium-rich island structures formed by in-situ nanomasking technology // Technical Physics Letters. 2009. - V.35. №11. - P. 1016-1019.
DOI: 10.1134/S1063785009110133.
Optimization of III-N heterostructures growth by MOVPE via surface processes control (Invited) / W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.E. Nikolaev, A.V.Sakharov, A.F. Tsatsulnikov, E.V. Yakovlev, R.A. Talalaev, A.V. Lobanova, A.S. Segal // 13th European Workshop on Metalorganic Vapour Phase Epitaxy (Ulm, Germany, 7-10 June 2009) // Booklet of Extended abstracts
Low-temperature growth kinetics in III-nitride and III-V MOVPE / W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.V. Sakharov, A.E. Nikolaev, V.M. Lantratov, N.A.Kalyuzhnyy, S.A.Mintairov, A.S. Segal, E.V. Yakovlev, O.V. Bord // 13th European Workshop on Metalorganic Vapour Phase Epitaxy (Ulm, Germany, 7-10 June 2009) // Booklet of Extended abstracts
MOVPE growth and advanced characterization of InAlN/GaN distributed Bragg reflectors / W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. V. Sakharov, S. O. Usov, A. E. Nikolaev, S. I. Troshkov, M. A. Yagovkina, E. V. Yakovlev, R. A. Talalaev, D. V. Davydov, A. V. Lobanova, N. A. Cherkashin, M. J. Hytch, P. N. Brunkov, and A. F. Tsatsulnikov // 13th European Workshop on Metalorganic Vapour Phase Epitaxy (Ulm, Germany, 7-10 June 2009) // Booklet of Extended abstracts
Lundin W.V., Sakharov A.V., Zavarin E.E., Sinitsyn M.A., Nikolaev A.E., Mikhailovsky G.A., Brunkov P.N., Goncharov V.V, Ber B.Y., Kazantsev D.Y., Tsatsulnikov A.F., Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers // Semiconductors. 2009. - V.43. №7. - P. 963-967.
DOI: 10.1134/S1063782609070276.
Tsatsulnikov A.F., Lundin W.V., Sakharov A.V., Nikolaev A.E., Sakharov A.V., Lundin W.V., Zavarin E.E., Sinitsyn M.A., Nikolaev A.E., Usov S.O., Sizov V.S., Mikhailovsky G.A., Cherkashin N.A., Hytch M., Hue F., Yakovlev E.V., Lobanova A.V., Tsatsulnikov A.F. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs // Semiconductors. 2009. - V.43. №6. - P. 812-817.
DOI: 10.1134/S1063782609060232.
Sizov V.S., Gutkin A.A., Sakharov A.V., Lundin V.V., Brunkov P.N., Tsatsul`nikov A.F. Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix // Semiconductors. 2009. - V.43. №6. - P. 807-811.
DOI: 10.1134/S1063782609060220.
Usov S. O., Tsatsul’nikov A. F., Zavarin E. E., Kyutt R. N., Ledentsov N. N. Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions // Physics of the Solid State. 2009. - V.51(8). - P. 1615-1621.
DOI: 10.1134/S1063783409080162.
W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, E. Yu. Lundina, A. V. Sakharov, S. I. Troshkov, A. F. Tsatsul’nikov InGaAlN Heterostructures for LEDs Grown on Patterned Sapphire Substrates // Technical Physics Letters. 2008. - V.34. №11. - P. 924–926.
DOI: 10.1134/S1063785008110072.
W.V. Lundin, E.E.Zavarin, M.A.Sinitsyn, M.A.Yagovkina, A.F.Tsatsul’nikov Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen // Technical Physics Letters. 2008. - V.34. №11. - P. 908–911.
DOI: 10.1134/S1063785008110023.
MOVPE of AlN using molecular nitrogen as nitrogen precursor / W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, M.A.Yagovkina, A.F. Tsatsulnikov // Proceedings of the 14th International Conference of Metalorganic Vapor Phase Epitaxy (Metz, France, 1-6 June 2008). – Metz, 2008.
W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.E. Nikolaev, E.Yu. Lundina, A.V.Sakharov, A.F. Tsatsulnikov Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs, Proceedings of the 14th International Conference of Metalorganic Vapor Phase Epitaxy (Metz, France, 1-6 June 2008) // Journal of Crystal Growth. 2008. - V. 310. №23. - P. 5151-5153.
DOI: 10.1016/j.jcrysgro.2008.07.055.
E.V. Yakovlev, R.A. Talalaev, A.V. Kondratyev, A.S. Segal, A.V. Lobanova, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.F. Tsatsulnikov, A.E. Nikolaev Hydrogen effects in III-nitride MOVPE, Proceedings of the 14th International Conference of Metalorganic Vapor Phase Epitaxy (Metz, France, 1-6 June 2008) // Journal of Crystal Growth. 2008. - V. 310. №23. - P. 4862-4866.
DOI: 10.1016/j.jcrysgro.2008.07.099.
A. Kondratyev, R. Talalaev, A. Segal1, E. Yakovlev, W. Lundin, E. Zavarin, M. Sinitsyn, A. Tsatsulnikov, A.E. Nikolaev Effect of Metallic Surface Coverage on Material Quality in III-Nitride MOVPE // Physica Status Solidi (c). 2008. - V. 5. №6. - P. 1691-1694.
DOI: 10.1002/pssc.200778589.
Usov S. O., Tsatsul’nikov A. F., Lundin V. V., Sakharov A. V., Zavarin E. E., Sinitsyn M. A., Ledentsov N. N. Energy Characteristics of Excitons in Structures Based on InGaN Alloys // Semiconductors. 2008. - V.42. №6. - P. 720-725.
DOI: 10.1134/S1063782608060146.
W.V. Lundin, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov Effect of hydrogen on anisotropy of the p -GaN growth rate in the case of side-wall MOCVD // Semiconductors. 2008. - V.42. №2. - P. 232-237.
DOI: 10.1134/S1063782608020218.
Usov S. O., Tsatsul’nikov A. F., Lundin W.V., Sakharov A. V., Zavarin E. E., Ledentsov N. N. Photoluminescence of localized excitons in InGaN quantum dots // Semiconductors. 2008. - V.42. - P. 188-191.
DOI: 10.1134/S1063782608020115.
V. S. Sizov, A. F. Tsatsul’nikov, V. V. Lundin Energy InGaN Nanoinclusions in an AlGaN Matrix // Semiconductors. 2008. - V.42. №7. - P. 788–793.
DOI: 10.1134/S1063782608070075.
Energy characteristics of excitons in InGaN/GaN heterostructures / S.O. Usov, A.F. Tsatsul’nikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, M.A. Sinitsyn, N.N. Ledentsov // Proceedings of the SPIE Photonics Europe 2008 (Strasbourg, France, 7-10 April, 2008) // SPIE Proceedings. Optical Micro- and Nanometrology in Microsystems Technology II. 25 April 2008. - V. 6995. - P. 699515/1-12.
DOI: 10.1117/12.780789.
Usov S.O., Tsatsul’nikov A.F., Lundin W.V., Sakharov A.V., Zavarin E.E., Sinitsyn M.A., Ledentsov N.N. Studies of Photoluminescence Spectra of InGaN/GaN Heterostructures / Photoluminescence Research Progress // Edited by Harry K. Wright and Grace V. Edwards. - Nova Science Publishers Inc., 2008. P. 307-323. Chap. 7. ISBN 978-1-60456-538-6.
Usov S.O., Tsatsulnikov A.F., Lundin V.V., Sakharov A.V., Zavarin E.E., Sizov D.S., Musikhin Yu.G., Bert N.A., Arakcheeva E.M., Ledentsov N.N. Analysis of the local indium composition in an ultrathin InGaN layers // Semicond. Sci. Technol. 2007. - V. 22. - P. 528-532.
DOI: 10.1088/0268-1242/22/5/012.
Sizov D.S., Sizov V.S., Lundin V.V., Zavarin E.E., Tsatsul`nikov A.F., Musikhin Yu.G., Vlasov A.S., Ledentsov N.N., Mintairov A.M., Sun K., Merz J. Investigations of InGaN/GaN and InGaN/InGaN QDs grown in a wide pressure MOCVD reactor // International Journal of Nanoscience. 2007. - V.6. №5. - P. 327-332.
DOI: 10.1142/S0219581X07004882.
Non-polar a-(In)GaN heterostructures / W.V.Lundin, E.E.Zavarin, A.E.Nikolaev, M.A.Sinitsyn, A.V.Sakharov, D.S.Sizov, R.A. Talalaev , A.V. Lobanova, and A.F.Tsatsulnikov // 12th European Workshop on Metalorganic Vapour Phase Epitaxy, Booklet of Extended abstracts (Bratislava, Slovakia, 3-6 June, 2007). – Bratislava, 2007. – PP. 57-60.
MOVPE growth of III-N heterostructures for optoelectronic and electronic applications on SiC substrates / W.V.Lundin, A.E.Nikolaev, E.E.Zavarin, M.A.Sinitsyn, A.V.Sakharov, A.F.Tsatsulnikov // 12th European Workshop on Metalorganic Vapour Phase Epitaxy, Booklet of Extended abstracts (Bratislava, Slovakia, 3-6 June, 2007). – Bratislava, 2007. – PP. 147-149.
D. S. Sizov, E. E. Zavarin, N. N. Ledentsov, V. V. Lundin, Yu. G. Musikhin, V. S. Sizov, R. A. Suris, A. F. Tsatsul’nikov Nonequilibrium Population of Charge Carriers in Structures with InGaN Deep Quantum Dots // Semiconductors. 2007. - V.41. №5. - P. 595–589.
DOI: 10.1134/S1063782607050193.
W.V. Lundin, E.E. Zavarin, D.S. Sizov, M.A. Sinitsin, A.F. Tsatsul’nikov, A.V. Kondratyev, E.V. Yakovlev, R.A. Talalaev Effects of reactor pressure and residence time on GaN MOVPE growth efficiency // Journal of Crystal Growth. 2006. - V. 287. №2. - P. 605-609.
DOI: 10.1016/j.jcrysgro.2005.10.084.
V. S. Sizov, D. S. Sizov, G. A. Mikhailovskiœ, E. E. Zavarin, V. V. Lundin, A. F. Tsatsul’nikov, N. N. Ledentsov The Study of Lateral Carrier Transport in Structures with InGaN Quantum Dots in the Active Region // Semiconductors. 2006. - V.40. №5. - P. 574–580.
DOI: 10.1134/S1063782606050113.
Baranov E.E., Emel`yanov A.M., Lundin W.V., Petrov V.N., Sakharov V.I., Serenkov I.T., Sobolev N.A., Titkov A.N., Shek E.I., Shmidt N.M. Correlation between luminescent properties and structure organization in AlGaN/GaN superlattices annealed after erbium ion implantation // Technical Physics. 2006. - V.51. №12. - P. 1600–1603.
DOI: 10.1134/S1063784206120085.
Single versus ensemble quantum dot emission in near-field spectra of InGaN QWs / A. M. Mintairov, J. L. Merz, D. S. Sizov, V. S. Sizov, V. V. Lundin, E. E. Zavarin, A. F. Tsatsul'nikov, A. S. Vlasov, N. N. Ledentsov // Proceedings of the 14th International Symposium. Nanostructures: Physics and Technology (St. Petersburg, Russia, 26-30 June, 2006).
Nonequilibrium carrier statistics in deep InGaN quantum dots / D. S. Sizov, W. V. Lundin, E. E. Zavarin, V. S. Sizov, A. F. Tsatsul'nikov, A. M. Mintairov, R. A. Suris, N. N. Ledentsov and J. Merz // Proceedings of the 14th International Symposium. Nanostructures: Physics and Technology (St. Petersburg, Russia, 26-30 June, 2006).
Investigations of a local indium composition in an ultrathin InGaN layers / S.O. Usov, A.F. Tsatsulnikov, V.V. Lundin, A.V. Sakharov, E.E. Zavarin, D.S. Sizov, Yu.G. Musikhin, N.A. Bert, E.M. Arakcheeva, N.N. Ledentsov // Proceedings of the 14th International Symposium. Nanostructures: Physics and Technology (St. Petersburg, Russia, 26-30 June, 2006) // P. 281-282.
Passivation of an AlxGa1-xN/GaN heterostructure by a nano-crystalline GaN layer deposited under electron cyclotron resonance plasma conditions / S. Shapoval, A. Kovalchuk, V. Sirotkin, V. Zemlyakov, V. Krasnik, K. Dudinov, V. Lundin, E. Zavarin, A. Sakharov, A. Tsatsulnikov, V. Ustinov // Proceedings of the 14th International Symposium. Nanostructures: Physics and Technology (St. Petersburg, Russia, 26-30 June, 2006).
Mintairov A.M., Merz J.L., Sizov D.S., Sizov V.S., Lundin V.V., Usov S.O., Zavarin E.E., Tsatsul’nikov A.F., Musikhin Yu. G., Vlasov A.S., Ledentsov N.N. Near-field photoluminescence spectroscopy of InGaN quantum dots // Material Research Society Symposium Proceedings. 2006. - V. 892 - P. 843-848.
DOI: 10.1557/PROC-0892-FF32-06.
Onushkin G.A., Zakgeim A.L., Zakgeim D.A., Rozhansky I.V., Tsatsulnikov A.F., Lundin W.V., Sizov D.S. Micro-EL studying of high power blue LEDs // Physica Status Solidi (C). 2006. - V. 3. №6. - P. 2149-2152.
DOI: 10.1002/pssc.200565161.
Sizov D.S., Sizov V.S., Lundin V.V., Zavarin E.E., Tsatsul`nikov A.F., Vlasov A.S., Musikhin Yu.G., Ledentsov N.N., Mintairov A.M., Sun K., Merz J. Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance // Physica Status Solidi (a). 2006. - V. 3. №6. - P. 2043–2047.
DOI: 10.1002/pssc.200565465.
W. V. Lundin, E. E. Zavarin, D. S. Sizov Influence of the Carrier Gas Composition on Metalorganic Vapor Phase Epitaxy of Gallium Nitride // Technical Physics Letters. 2015. - V.31. №4. - P. 293–294.
DOI: 10.1134/1.1920375.
In-situ investigations of GaN chemical unstability during MOCVD/ Zavarin E.E., Sizov D.S., Lundin W.V., Tsatsulnikov A.F., Talalaev, R.A., Kondratyev A.V., Bord O.V. // Proceedings of the international symposium EUROCVD 15: fifteenth European Conference on Chemical Vapor Deposition (Bochum, Germany, 5-9 September, 2005). – Bochum, 2005. - V.2005-09. – PP. 299-305.
Reactor pressure and residence time effects in GaN MOVPE / W.V. Lundin, E.E. Zavarin, D.S. Sizov, M.A. Sinitsyn, A.F. Tsatsulnikov, A.V. Kondratyev, E.V. Yakovlev, R.A. Talalaev // Proceedings of the 11th European Workshop on Metalorganic Vapour Phase Epitaxy, Booklet of Extended abstracts (Lausanne, Switzerland, 5-8 June, 2005). – Lausanne, 2005. – PP. 353-355.
Effect of Hydrogen on GaN and AlGaN Growth by MOVPE / W.V.Lundin, R.A.Talalaev, E.E.Zavarin, D.S.Sizov, M.A.Sinitsyn, A.F.Tsatsulnikov // Proceedings of the 11th European Workshop on Metalorganic Vapour Phase Epitaxy, Booklet of Extended abstracts (Lausanne, Switzerland, 35-8 June, 2005). – Lausanne, 2005. – PP. 331-333.
D.S. Sizov, V.S. Sizov, V.V. Lundin, A.F. Tsatsul’nikov, E.E. Zavarin, N.N. Ledentsov Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy // Semiconductors. 2005. - V.39. №11. - P. 1304–1307.
DOI: 10.1134/1.2128455.
A.M. Emel’yanov, N.A. Sobolev, E.I. Shek, V.V. Lundin, A.S. Usikov, E.O. Parshin Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers // Semiconductors. 2005. - V.39. №9. - P. 1045–1047.
DOI: 10.1134/1.2042596.
D.S. Sizov, V.S. Sizov, E.E. Zavarin, V.V. Lundin, A.V. Fomin, A.F. Tsatsul’nikov, N.N. Ledentsov A study of carrier statistics in InGaN/GaN LED structures // Semiconductors. 2005. - V.39. №4. - P. 467-471.
DOI: 10.1134/1.1900264.
D.S. Sizov, V.S. Sizov, E.E. Zavarin, V.V. Lundin, A.V. Fomin, A.F. Tsatsul’nikov, N.N. Ledentsov Kinetics and inhomogeneous carrier injection in InGaN nanolayers // Semiconductors. 2005. - V.39. №2. - P. 249–253.
DOI: 10.1134/1.1864208.
A. I. Besyulkin, A. P. Kartashova, A. G. Kolmakov, V. V. Krivolapchuk, W. V. Lundin, M. M. Mezdrogina, A. V. Sakharov, N. M. Shmidt, A. A. Sitnikova, A. L. Zakgeim, E. E. Zavarin, R. V. Zolotareva Surface control of light-emitting structures based on III-nitrides // Physica Status Solidi (c). 2005. - V. 2. №2. - P. 837-840.
DOI: 10.1002/pssc.200460340.
I.P. Soshnikov, N.N. Ledentsov, A.F. Tsatsul’nikov, A.V. Sakharov, W.V. Lundin, E.A. Zavarin, A.V. Fomin, D. Litvinov, E. Hahn, D. Gerthsen Special Features of Structural Interaction in (AlGaIn)N / GaN Heterostructures Used as Dislocation Filters // Semiconductors. 2005. - V.39. №1. - P. 100–102.
DOI: 10.1134/1.1852655.
Smirnov M.B., Karpov S.V., Davydov V.Y., Smirnov A.N., Zavarin E.E., Lundin V.V. Vibrational spectra of AlN/GaN superlattices: Theory and experiment // Physics of the Solid State. 2005. - V.47. №4. - P. 742-753.
DOI: 10.1134/1.1913991.
Krivolapchuk V.V., Kozhanova Y.V., Lundin V.V., Mezdrogina M.M., Rodin S.N. Parameters of thulium-doped gallium nitride crystals with wurtzite structure // Physics of the Solid State. 2005. - V.47. №7. - P. 1245-1248.
DOI: 10.1134/1.1992599.
Krivolapchuk V.V., Lundin V.V., Mezdrogina M.M. The role of built-in electric fields in the InGaN/GaN quantum-well emission // Physics of the Solid State. 2005. - V.47. №7. - P. 1388-1392.
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Davydov V.Y., Smirnov A.N., Smirnov M.B., Karpov S.V., Yagovkina M.A., Besulkin A.I., Lundin W.V. Optical phonons in hexagonal GaN/AlN and GaN/AlGaN superlattices // Physica Status Solidi (c). 2005. - V. 2. №7. - P. 2389-2393.
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A.G. Milekhin, M.Yu. Ladanov, W.V. Lundin, A.I. Besulkin, A.N. Smirnov, V.Yu. Davydov, C. Himcinschi, M. Friedrich, D.R.T. Zahn IR reflection of optical phonons in GaN/AlGaN superlattices, Proceedings of the 11th International Conference on Phonon Scattering in Condensed Matter (Phonons2004) (St Petersburg, Russia, 25-30 July 2004) // Physica Status Solidi (c). 2004. - V. 1. №11. - P. 2733–2736.
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D.A. Zakheim, I.P. Smirnova, E.M. Arakcheeva, M.M. Kulagina, S.A. Gurevich, I.V. Rozhansky, V.W. Lundin, A.F. Tsatsulnikov, A.V. Sakharov, A.V. Fomin, A.L. Zakheim, E.D. Vasil'eva, G.V. Itkinson Fabrication of high-power flip-chip blue and white LEDs operating under high current density // Physica Status Solidi (c). 2005. - V. 1. №10. - P. 2401–2404.
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A.V. Kondratyev, R.A. Talalaev, W.V. Lundin, A.V. Sakharov, A.F. Tsatsul’nikov, E.E. Zavarin, A.V. Fomin, D.S. Sizov Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study // Journal of Crystal Growth. 2004. - V. 272. №1-4. - P. 420–425.
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Tsatsulnikov A.F., Lundin W.V., Sakharov A.V., Nikolaev A.E., Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition // Semiconductors. 2004. - V.38. №6. - P. 678–682.
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N.M. Shmidt, M.E. Levinshtein, W.V. Lundin, A.I. Besyul’kin, P.S. Kop’ev, S.L. Rumyantsev, N. Pala, M.S. Shur Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure // Semiconductors. 2004. - V.38. №9. - P. 998–1000.
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W.V. Lundin, A.V. Sakharov, A.F. Tsatsul’nikov, E.E. Zavarin, A.I. Besulkin, A.V.Fomin, D.S. Sizov MOCVD growth of AlGaN epilayers and AlGaN/GaN SLs in a wide composition range / edited by Shur M.S., Žukauskas A. // UV Solid-State Light Emitters and Detectors. NATO Science Series (Series II: Mathematics, Physics and Chemistry). - Springer, Dordrecht. 2005. - V. 144. - P. 223-231.
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V.Yu. Davydov, A.N. Smirnov, M.B. Smirnov, S.V. Karpov, I.N. Goncharuk, R.N. Kyutt, M.V. Baidakova, A.V. Sakharov, E.E. Zavarin, W.V. Lundin, H. Harima, K. Kisoda Lattice dynamics and Raman spectra of strained hexagonal GaN/AlN and GaN/AlGaN superlattices // Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS-5) (Nara, Japan, 25-30 May 2003) // Physica Status Solidi (c). 2003. - V. 0(7). - P. 2035-2038.
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P. Girard, Ph. Cadet, M. Ramonda, N.M. Shmidt, A.S. Usikov, W.V. Lundin, M.S. Dunaevskii, A.N. Titkov Atomic and electrostatic force microscopy observations on gallium nitride // Physica Status Solidi (a). 2016. - V. 195. №3. - P. 508-515.
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Optical phonons in hexagonal GaN/AlN and GaN/AlxGa1-xN superlattices: Theory and experiment / V.Yu. Davydov, A.N. Smirnov, I.N. Goncharuk, R.N. Kyutt, M.P. Scheglov, M.V. Baidakova, W.V. Lundin, E.E. Zavarin, M.B. Smirnov, S.V. Karpov, H. Harima // Proceedings of the 11th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 23-28 June 2003). - Saint-Petersburg, 2003. – P. 72-74.
A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M.G. Mil'vidskii, S.J. Pearton, A.S. Usikov, N.M. Shmidt, A.V. Osinsky, W.V. Lundin, E.E. Zavarin, A.I. Besulkin Deep levels studies of AlGaN/GaN superlattices // Solid-State Electronics. 2003. - V. 47. №4. - P. 671-676.
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W.V.Lundin, A.S.Usikov Influence of MOCVD growth conditions on properties of III-nitride multylayer structures / edited by T.Paskova, B.Monemar // Vacuum Science and Technology: Nitrides as Seen by the Technology. - Kerala, India. 2002. - P. 167-182. ISBN: 81-7736-198-8.
I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.F. Tsatsul’nikov, A.S. Usikov, Zh.I. Alferov, Yu.G. Musikhin, D. Gerthsen Quantum dot origin of luminescence in InGaN-GaN structures // Physical Review B. 2002. - V. 66. №15. - P. 155310.
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I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsulnikov, Yu.G. Musikhin, D. Gerthsen, N.N. Ledentsov, A. Hoffmann, D. Bimberg Time-resolved studies of InGaN/GaN quantum dots // Physica Status Solidi (a). 2002. - V. 192. №3. - P. 49–53.
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V.Yu. Davydov, I.N. Goncharuk, A.N. Smirnov, A.E. Nikolaev, W.V. Lundin, A.S. Usikov, A.A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, H. Harima Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys // Physical Review B. 2002. - V. 65. №12. - P. 125203.
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Yu.G. Musikhin, D. Gerthsen, D.A. Bedarev, N.A. Bert, W.V. Lundin, A.F. Tsatsul’nikov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures // Applied Physics Letters. 2002. - V. 80. №12. - P. 2099-2101.
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V.Yu. Davydov, A.N. Smirnov, I.N. Goncharuk, R.N. Kyutt, M.P. Scheglov, M.V. Baidakova, W.V. Lundin, E.E. Zavarin, M.B. Smirnov, S.V. Karpov, H. Harima Raman spectroscopy as a tool for characterization of strained hexagonal GaN/AlxGa1-xN superlattices / Proceedings of the International Workshop on Nitride Semiconductors (IWN-2002) in Aachen (Aachen, Germany, 22-25 July 2002) // Physica Status Solidi (b). 2002. - V. 234. №3. - P. 975-979.
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A.S. Usikov, W.V. Lundin, E.E. Zavarin, A.I. Besulkin, N.M. Shmidt, A.I. Pechnicov, Y. Shapovalova, G. Gainer Growth and characterization of LEDs structures by MOCVD on HVPE grown GaN templates / Proceedings of the International Workshop on Nitride Semiconductors (IWN-2002) in Aachen (Aachen, Germany, 22-25 July 2002) // Physica Status Solidi (c). 2002. - V. 0. №1. - P. 39-42.
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A. Reznitsky, A. Klochikhin, S. Permogorov, L. Tenishev, W. Lundin, A. Usikov, M. Schmidt, C. Klingshirn Localization of Excitons at Small In Clusters in Diluted InGaN Solid Solutions / Proceedings of the International Workshop on Nitride Semiconductors (IWN-2002) in Aachen (Aachen, Germany, 22-25 July 2002) // Physica Status Solidi (c). 2002. - V. 0. №1. - P. 280-283.
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N.M. Shmidt, G. Aliev, A.N. Besyul’kin, J. Davies, M.S. Dunaevsky, A.G. Kolmakov, W.V. Lundin, A.V. Sakharov, A.S. Usikov, D. Wolverson, E.E. Zavarin Mosaic structure and optical properties of III-nitrides / Proceedings of the International Workshop on Nitride Semiconductors (IWN-2002) in Aachen (Aachen, Germany, 22-25 July 2002) // Physica Status Solidi (c). 2002. - V. 0. №1. - P. 558–562.
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Raman studies as a tool for characterization of strained hexagonal GaN/AlxGa1-xN superlattices / Davydov V.Yu., Smirnov A.N., Goncharuk I.N., Kyutt R.N., Scheglov M.P., Baidakova M.V., Lundin W.V., Zavarin E.E., Smirnov M.B., Karpov S.V., Harima H. // Proceedings of the 10th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 17–21 June 2002). - Saint-Petersburg, 2002. – P. 164–167.
A.G. Kolmakov, V.V. Emtsev, W.V. Lundin, V.V. Ratnikov, N.M. Shmidt, A.N. Titkov, A.S. Usikov A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers / Proceedings of the 21st International Conference on Defects in Semiconductors (Giessen, Germany, 16 - 20 July 2001) // Physica B. 2001. - V. 308-310. - P. 1141-1144.
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W.V. Lundin, A.V. Sakharov, A.F. Tsatsulnikov, E.E. Zavarin, A.I. Besulkin, M.F. Kokorev, R.N. Kyutt, V.Yu. Davydov, V.V. Tretyakov, D.V. Pakhnin, A.S. Usikov Growth and characterization of AlGaN/GaN superlattices // Physica Status Solidi (a). 2001. - V. 188. №2. - P. 885-888.
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W.V. Lundin, A.V. Sakharov. A.S. Usikov, D.A. Bedarev, A.F. Tsatsulnikov, Ru Chin Tu, Sun Bin Yin, Jim Y. Chi Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers // Physica Status Solidi (a). 2001. - V. 188. №1. - P. 73-77.
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A.V. Sakharov, A.S. Usikov, W.V. Lundin, D.A. Bedarev, A.F. Tsatsulnikov, E.E. Zavarin, A.I. Besulkin, N.N. Ledentsov, D. Bimberg Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping // Physica Status Solidi (a). 2001. - V. 188. №1. - P. 91-94.
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A.V. Sakharov, A.S. Usikov, W.V. Lundin, A.F. Tsatsulnikov, Ru Chin Tu, Sun Bin Yin, Jim Y. Chi Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences // Physica Status Solidi (a). 2001. - V. 188. №1. - P. 95-98.
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V.Yu. Davydov, A.A. Klochikhin, I.E. Kozin, V.V. Emtsev, I.N. Goncharuk, A.N. Smirnov, R.N. Kyutt, M.P. Scheglov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, A.S. Usikov Optic and acoustic phonons in strained hexagonal GaN/AlGaN multilayer structures // Physica Status Solidi (a). 2001. - V. 188. №2. - P. 863-866.
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A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.S. Usikov, N.M. Shmidt, W.V. Lundin Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire // Solid-State Electronics. 2001. - V. 45. №2. - P. 255-259.
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N.M. Shmidt, V.V. Emtsev, A.G. Kolmakov, A.D. Kryzhanovsky, W.V. Lundin, D.S.Poloskin, V.V. Ratnikov, A.N. Titkov, A.S. Usikov, E.E. Zavarin Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers // Nanotechnology. 2001. - V. 12. №4. - P. 471-474.
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D.V. Davydov, V.V. Emtsev, A.A. Lebedev, W.V. Lundin, D.S. Poloskin, N.M. Shmidt, A.S. Usikov, E.E. Zavarin Electron traps in undoped GaN layers subjected to gamma-irradiation and annealing / edited by G. Pensl, D. Stephani, M. Hundhausen // Materials Science Forum. - Kerala, India. 2001. - V. 353-356. -P. 799-802.
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A Georgakilas, K Amimer, P Tzanetakis, Z Hatzopoulos, M Cengher,B Pecz, Zs Czigany, L Toth, M.V Baidakova, A.V Sakharov, V.Yu Davydov Correlation of the structural and optical properties of GaN grown on vicinal (0 0 1) GaAs substrates with the plasma-assisted MBE growth conditions // Journal of Crystal Growth. 2001. - V. 227–228. - P. 410–414.
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B.M. Ataev, W.V. Lundin, V.V. Mamedov, A.M. Bagamadova, E.E. Zavarin Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/α-Al2O3 // Journal of Physics: Condensed Matter. 2001. - V. 13. №9. - P. L211-L214.
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B. M. Ataev, I.K. Kamilov, W. V. Lundin, V. V. Mamedov, A.K. Omaev, Sh.-M. O. Shakhshaev High-quality ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by CVD // Technical Physics Letters. 2001. - V.27. №1. - P. 55–57.
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Exciton localization by clusters in diluted bulk InGaN and two-dimensional ZnCdSe solid solutions / A. Klochikhin, A. Reznitsky, L. Tenishev, S. Permogorov, W. Lundin, A. Usikov, S. Sorokin, S. Ivanov, M. Schmidt, H. Kalt, C. Klingshirn // Proceedings of the 9th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 18-22 June 2001). - Saint-Petersburg, 2001. – P. 554-557.
Localized excitons in random and partly phase separated solid solutions: evidence of fractal structure of islands / A. Reznitsky, A. Klochikhin, L. Tenishev, S. Permogorov S. Sorokin, S. Ivanov, W. Lundin, A. Usikov, E. Kurtz, H. Kalt and C. Klingshirn // Proceedings of the 9th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 18-22 June 2001). - Saint-Petersburg, 2001. – P. 534-537.
Correlation of mosaic structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers / A.G. Kolmakov, N.M. Shmidt, V.V. Emtsev, A.D. Kryzhanovsky, W.V. Lundin, D.S. Poloskin, V.V. Ratnikov, A.N. Titkov, A.S. Usikov, E.E. Zavarin // Proceedings of the 9th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 18-22 June 2002). - Saint-Petersburg, 2002. – P. 135-138.
Raman studies of acoustical phonons in strained hexagonal GaN/AlGaN superlattices / V. Yu. Davydov, A. A. Klochikhin, I. E. Kozin, I. N. Goncharuk, A. N. Smirnov, R. N. Kyutt, M. P. Scheglov, A. V. Sakharov, V. V. Tretyakov, A. V. Ankudinov, M. S. Dunaevskii, W. V. Lundin, E. E. Zavarin, A. S. Usikov // Proceedings of the 9th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 18-22 June 2001). - Saint-Petersburg, 2001. – P. 154-157.
N.M. Shmidt, W.V. Lundin, A.V. Sakharov, A.S. Usikov, E.E. Zavarin, A.V. Govorkov, A.Ya. Polyakov, N.B. Smirnov Ultra-violet photodetectors based on GaN and AlxGa1-xN epitaxial layers / Proceedings of the 16th International Conference on Photoelectronics and Night Vision Devices (Moscow, Russia, 25-27 May 2000) // Proceedings of the SPIE. 2000. - V. 4340. - P. 92-96.
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N.N. Ledentsov, I.L. Krestnikov, M. Strassburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen Quantum dots formed by ultrathin insertions in wide-gap matrices // Thin Solid Films. 2000. - V.367. №1-2. - P. 40-47.
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I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, J. Holst, A. Hoffmann, D. Bimberg Lasing in Vertical Direction in Structures with InGaN Quantum Dots // Physica Status Solidi (a). 2000. - V. 180. №1. - P. 91-96.
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Influence of Growth Interruptions and Gas Ambient on Optical and Structural Properties of InGaN/GaN Multilayer Structures / A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, D.A.Bedarev, A.F.Tsatsul’nikov, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg // Proceedings of the International Workshop on Nitride Semiconductors (IWN2000), (Nagoya, Japan, 24-27 September 2000). - Nagoya, 2000.
Influence of the thick GaN buffer growth conditions on the electroluminescence properties of GaN/InGaN multilayer heterostructures / A.S. Usikov, W.V. Lundin, D.A. Bedarev, E.E. Zavarin, A.V. Sakharov, A.F.Tsatsul’nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg // Proceedings of the International Workshop on Nitride Semiconductors (IWN2000), (Nagoya, Japan, 24-27 September 2000). - Nagoya, 2000.
Study of the III-nitrides MOCVD growth process with in-situ optical reflectance monitoring / W.V.Lundin, A.S.Usikov, E.E.Zavarin, D.A.Bedarev, A.I.Besulkin, A.V.Sakharov, N.N. Ledentsov, A.Hoffmann, D.Bimberg, Zh.I. Alferov // Booklet of the 4th European GaN Workshop (Nottingham, UK, 2-5 July 2000). - Nottingham, 2000. – P. 6.
Effect of annealing on phase separation in ternary III–N alloys / A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, E.E. Zavarin, A.S. Usikov, A.F. Tsatsul'nikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, Zh.I. Alferov // Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 19-23 June 2000). - Saint-Petersburg, 2000. – P. 216-218.
Optical phonons in hexagonal GaN/AlxGa1-xN multilayered structures / V.Yu. Davydov, A.A. Klochikchin, S.V. Goupalov, I.N. Goncharuk, A.N. Smirnov, W.V. Lundin, A.S. Usikov, E.E. Zavarin, A.V. Sakharov, M.V. Baidakova, J. Stemmer, H. Klausing, D. Mistele, O. Semchinova // Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 19-23 June 2000). - Saint-Petersburg, 2000. – P. 208-210.
I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, Yu. G. Musikhin, A. P. Kartashova, A. S. Usikov, A. F. Tsatsul’nikov, N. N. Ledentsov, Zh. I. Alferov, I. P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A. C. Plaut, A. A. Hoffmann, D. Bimberg Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots // Semiconductors. 2000. - V.34. №4. - P. 481-487.
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A.Y. Polyakov, A.S. Usikov, B. Theys, N.B. Smirnov, A.V. Govorkov, F. Jomard, N.M. Shmidt, W.V. Lundin Effects of proton implantation on electrical and recombination properties of n-GaN // Solid-State Electronics. 2000. - V. 44. №11. - P. 1971-1983.
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A.S. Usikov, V.V. Tret’yakov, A.V. Bobyl’, R.N. Kyutt, W.V. Lundin, B.V. Pushnyi, N.M. Shmidt Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)N epilayers on sapphire // Semiconductors. 2000. - V.34. №11. - P. 1248-1254.
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A.F. Tsatsul’nikov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, A.P. Kartashova, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition // Semicondor Science and Technology. 2000. - V.15. №7. - P. 766-769.
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I.P. Soshnikov, V.W. Lundin, A.S. Usikov, I.P. Kalmykova, N.N. Ledentsov, A. Rosenauer, B. Neubauer, D. Gerthsen Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix // Semiconductors. 2000. - V.34. №6. - P. 621-625.
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N.A. Sobolev, V.V. Lundin, V.I. Sakharov, I.T. Serenkov, A.S. Usikov, A.M. Emel’yanov Effect of annealing on the optical and structural properties of GaN:Er // Semiconductors. 1999. - V.33. №6. - P. 624-626.
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D.A. Bedarev, S.O. Kognovitskii, V.V. Lundin Photoinduced self-organization of gallium nanowires on a GaN surface // Technical Physics Letters. 1999. - V.25. №5. - P. 385-387.
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Growth and characterization of InGaN/GaN nanoscale heterostructures / W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, M.V. Baidakova, I.L. Krestnikov, N.N. Ledentsov // Proceedings of the 7th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 14-18 June 1999). - Saint-Petersburg, 1999. – P. 485-488.
Surface-mode lasing from optically pumped InGaN/GaN heterostructures / A.V. Sakharov, W.V. Lundin, V.A. Semenov, A. S. Usikov, N.N. Ledentsov, A.F. Tsatsul'nikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg // Proceedings of the 7th International Symposium Nanostructures: Physics and Technology, (Saint-Petersburg, Russia, 14-18 June 1999). - Saint-Petersburg, 1999. – P. 124-127.
I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, and Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser // Applied Physics Letters. 1999. - V. 75. №9. - P. 1192-1194.
DOI: 10.1063/1.124638.
A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Surface-mode lasing from stacked InGaN insertions in a GaN matrix // Applied Physics Letters. 1999. - V. 74. №26. - P. 3921-3923.
DOI: 10.1063/1.124224.
N. Shmidt, V. Emtsev, A. Kryzhanovsky, R. Kyutt, W. Lundin, D. Poloskin, V. Ratnikov, A. Titkov, A. Usikov, P.Girard Mosaic Structure and Si Doping Related Peculiarities of Charge Carriers Transport in III-V Nitrides / Proceedings of the Third International Conference on Nitride Semiconductors (ICNS'99) (Montpellier, France, 4-9 July 1999) // Physica Status Solidi (b). 1999. - V. 216. №1. - P. 581–586.
DOI: 10.1002/(SICI)1521-3951(199911)216:1<581::AID-PSSB581>3.0.CO;2-G.
N. Shmidt, D. Davydov, V. Emtsev, I. Krestnikov, A. Lebedev, W. Lundin, D. Poloskin, A. Sakharov, A. Usikov, A. Osinsky Effect of Annealing on Defects in as-grown and g-ray Irradiated n-GaN Layers / Proceedings of the Third International Conference on Nitride Semiconductors (ICNS'99) (Montpellier, France, 4-9 July 1999) // Physica Status Solidi (b). 1999. - V. 216. №1. - P. 533–536.
DOI: 10.1002/(SICI)1521-3951(199911)216:1<533::AID-PSSB533>3.0.CO;2-S.
I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature / Proceedings of the Third International Conference on Nitride Semiconductors (ICNS'99) (Montpellier, France, 4-9 July 1999) // Physica Status Solidi (b). 1999. - V. 216. №1. - P. 511–516.
DOI: (SICI)1521-3951(199911)216:1<511::AID-PSSB511>3.0.CO;2-7.
A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix / Proceedings of the Third International Conference on Nitride Semiconductors (ICNS'99) (Montpellier, France, 4-9 July 1999) // Physica Status Solidi (b). 1999. - V. 216. №1. - P. 435–440.
DOI: 10.1002/(SICI)1521-3951(199911)216:1<435::AID-PSSB435>3.0.CO;2-O.
W.V. Lundin, A.S. Usikov, A.V. Sakharov, V.V. Tretyakov, D.V. Poloskin, N.N. Ledentsov, A. Hoffmann Growth and Characterization of Thick Si-doped AlGaN Epilayers on Sapphire Substrates / Proceedings of the Third International Conference on Nitride Semiconductors (ICNS'99) (Montpellier, France, 4-9 July 1999) // Physica Status Solidi (a). 1999. - V. 176. - P. 379–384.
DOI: 10.1002/(SICI)1521-396X(199911)176:1<379::AID-PSSA379>3.0.CO;2-V.
A.V. Sakharov, V.V. Lundin, V.A. Semenov, A.S. Usikov, N.N. Ledentsov, A.F. Tsatsul’nikov, and M.V. Baidakova Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures // Technical Physics Letters. 1999. - V.25. №6. - P. 462-465.
DOI: 10.1134/1.1262517.
A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudryavtsev, N.N. Ledentsov, V.V. Lundin, M.V. Maksimov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov Investigation of MOVPE-grown GaN layers doped with As atoms // Semiconductors. 1999. - V.33. №7. - P. 728-730.
DOI: 10.1134/1.1187770.
Characterization of the InGaN/GaN heterostructures grown by MOCVD in argon ambient / A.S. Usikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, I.L. Krestnikov, M.V. Baidakova, V.V. Ratnikov // Booklet of 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, (Prague, Czech Republic, 8-11 June 1999). - Prague, 1999. – P. 57-60.
Growth and characterization of GaN and AlGaN layers doped with Si / W.V. Lundin N.M. Shmidt, A.S. Usikov, A. Kryzhanovskii, D.V. Poloskin, V.V. Ratnikov, A.F. Sakharov, A.N. Titkov, V.V. Tretyakov // Booklet of 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, (Prague, Czech Republic, 8-11 June 1999). - Prague, 1999. – P. 53-56.
MOVPE growth of strain compensated Al0.15Ga0.85N/GaN Bragg mirrors on Al0.08Ga0.92N buffer layers / W.V. Lundin, A.S. Usikov, I.L. Krestnikov, A.V. Sakharov, A.F. Tsatsul’nikov, M.V. Baidakova, V.V. Tret’iakov, N.N. Ledentsov // Booklet of 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, (Prague, Czech Republic, 8-11 June 1999). - Prague, 1999. – P. 49-53.
Catalytic effects in low-temperature MOVPE-growth of GaN nucleation layers on sapphire substrates / W.V. Lundin, A.S. Usikov, A.V. Sakharov, V.V. Ratnikov // Booklet of 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, (Prague, Czech Republic, 8-11 June 1999). - Prague, 1999. – P. 45-48.
Incorporation of As in GaN layers during MOCVD growth / A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudravtsev, N.N. Ledentsov, W.V. Lundin, M.V. Maximov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann, D.Bimberg // Booklet of 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, (Prague, Czech Republic, 8-11 June 1999). - Prague, 1999. – P. 41-44.
A.S. Usikov, V.V. Tret'yakov, V.V. Lundin, Yu.M. Zadiranov, B.V. Pushniy, S.G. Konnikov Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence // Technical Physics Letters. 1999. - V.25. №4. - P. 253-256.
DOI: 10.1134/1.1262443.
V.Y. Davydov, W.V. Lundin, A.N. Smirnov, N.A. Sobolev, A.S. Usikov, A.M. Emel’yanov, M.I. Mockoviichuk, E.O. Parshin Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 mm // Semiconductors. 1999. - V.33. №1. - P. 1-5.
DOI: 10.1134/1.1187636.
N.M. Shmidt, A.V. Lebedev, W.V. Lundin, B.V. Pushnyi, V.V. Ratnikov, T.V. Shubina, A.A. Tsatsul'nikov, A.S. Usikov, G. Pozina, B. Monemar Effect of Si doping on structural, photo-luminescence and electric properties of GaN / Proceedings of the E-MRS’98 (Strasbourg, France, 16-19 June 1998) // Materials Science and Engineering: B. 1999. - V. 59. №1-3. - P. 195-197.
DOI: 10.1016/S0921-5107(98)00400-0.
Patent on invention, RU № 2673515 «Method to supply of carrying gases into the reactor in order to growth epitaxial structures based on metals of group III nitride and device for the implementation», Bazarevsky D.S., Zavarin E.E., Lundin W.V., Talalaev R.A., Tsatsulnikov A.F., Yakovlev E.V., priority date 02.02.2017.
Patent on utility model, RU № 169283 «Heterostructure field-effect transistor based on InGaAlN/As», Lundin W.V., Sakharov A.V., Zavarin E.E., Tsatsulnikov A.F., priority date 15.11.2016.
Patent on utility model, RU № 169284 «Heterostructure field effect transistor», Sakharov A.V., Zavarin E.E., Usov S.O., Lundin W.V., Tsatsulnikov A.F., priority date 15.11.2016.
Patent on invention, RU № 2650352 «Device for second harmonic generation of optical emission», Sokolovski G.S., Savchenko G.M., Dudelev V.V., Lundin W.V., Averkiev N.S., Sakharov A.V., priority date 27.10.2016.
Patent on invention, RU № 2642472 «Device for second harmonic generation of optical emission», Sokolovski G.S., Savchenko G.M., Dudelev V.V., Lundin W.V., Averkiev N.S., Sakharov A.V., priority date 05.10.2016.
Patent on invention, RU № 2650597 «Device for second harmonic generation of optical emission», Sokolovski G.S., Savchenko G.M., Dudelev V.V., Lundin W.V., Averkiev N.S., Sakharov A.V., priority date 16.12.2015.
Patent on invention, RU № 2504048 «Semiconductor electroluminescent emitter», Sakharov A.V., Tsatsulnikov A.F., Lundin W.V., Zavarin E.E., Nikolaev A.E., priority date 18.06.2012.
Patent on utility model, RU № 124441 «Semiconductor electroluminescent emitter», Sakharov A.V., Tsatsulnikov A.F., Lundin W.V., Zavarin E.E., Nikolaev A.E., priority date 18.06.2012.
Patent on utility model, RU № 119165 «Semiconductor light-emitting heterostructure (variants)», Lundin W.V., Zavarin E.E., Sakharov A.V., Tsatsulnikov A.F., Nikolaev A.E., priority date 03.04.2012.
Patent on utility model, RU № 102849 «Light-emitting crystal», Lundin W.V., Zavarin E.E., Tsatsulnikov A.F., Sakharov A.V., Nikolaev A.E., priority date 06.10.2010.
Patent on invention, RU № 2426197 «Nitride semiconductor device», Le S.S., Lundin W.V., Sakharov A.V., Zavarin E.E., Tsatsulnikov A.F., Nikolaev A.E., Han D.W., Park X.S., priority date 04.03.2010.
Patent on invention, RU № 2414549 «Method to growth of the gallium nitride layer and method to produce of the nitride semiconductor device», Kim Ch.S., Yakovlev E.V., Lundin W.V., Talalaev R.A., priority date 19.02.2009.
Patent on on invention, RU № 2371806 «The method for producing nitride semiconductor and nitride semiconductor device of p-type», Park X.S., Sinitsyn M.A., Lundin W.V., Sakharov A.V., Zavarin E.E., Tsatsulnikov A.F., Nikolaev A.E., Le S.S., priority date 20.03.2008.
Patent on invention, RU № 2369942 «Light-emitting device based on nitride semiconsuctor», Le S.S., Sinitsyn M.A., Lundin W.V., Sakharov A.V., Zavarin E.E., Tsatsulnikov A.F., Nikolaev A.E., Park X.S., priority date 21.02.2008.
Patent on invention US patent 6993055 “Resonant cavity device array for WDM application and the fabrication method of the same”, Wang J.S., Wu Y.-T., Maleev N.A., Sakharov A.V., Kovsh A.R., priority date 13.12.2002.
Certificate of state registration of topology of integrated circuit № 2017630014 «Test crystal for controlling of the technology parameters during producing of microwave chips based on gallium nitride», Tsatsulnikov A.F.
