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The group of MOVPE epitaxy and investigations of the properties of nano-heterostructures based on group III nitrides
Principal specialists:
Head of the group: Andrew F. Tsatsulnikov, Dr. Sc. (Phys.-Math.), Senior researcher,
phone: +7 (812) 297-3182
fax: +7 (812) 297-1017
e-mail: andrew@beam.ioffe.ru
Wsevolod V. Lundin, Ph.D., Senior researcher,
phone: +7 (812) 297-6866
fax: +7 (812) 297-1017
e-mail: lundin.vpegroup@mail.ioffe.ru
Alexey V. Sakharov, Ph.D., Senior researcher,
phone: +7 (812) 297-3182
fax: +7 (812) 297-1017
e-mail: val@beam.ioffe.ru
The studies on the growth of the group III nitrides by the MOVPE epitaxy method was initiated at the Ioffe Institute in 1995 for the first time in Russia. At present, the significant progress has been achieved in the development of the growth technology of the heterostructures of various types, including semiconductor devices for the opto- and microelectronics. The laboratory employees have the experience of operation of the various types of MOVPE epitaxy equipment, including equipment by Aixtron (Germany) and Veeco (USA). The Dragon-125 MOVPE home-made epitaxy equipment with original design were developed and successfully put in the operation in collaboration cooperation with Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS. The development of the growth technology and equipment is carried out with support of Soft Impact - STR Group, Inc. the world leader in area of the modeling of the MOVPE epitaxy growth processes.
The research work of the group is focused on the following subjects:
Basic investigations of technology of the MOVPE epitaxy of the III-N compounds.
The development of design and technology of the III-N heterostructures for the light-emitting devices, emitting in UV and visible spectral ranges, and white light sources based on LEDs.
Development of the AlGaN/AlN/GaN and AlInN/AlN/GaN heterostructures for high electron mobility transistors (HEMT) and small-scale integration (SSI) chip grown on sapphire, silicon and silicon carbide substrates with application of doping of transistors buffer layers by C and Fe atoms and including in-situ deposition of Si3N4 dielectric passivation layers on the top of the heterostructures surface.
Selective area epitaxy by MOVPE technique.
Development of technology and equipment for MOVPE epitaxy of III-N based heterostructures.
