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Ioffe Institute

Centre of Nanoheterostructures

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Laboratory of Physics of Semiconductor Heterostructures

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Overview

Staff members

Publications

Equipment

Staff education

Cooperation

The group of MOVPE epitaxy and investigations of the properties of nano-heterostructures based on group III nitrides

Equipment for epitaxial growth by the MOVPE method.

AIX2000 HT MOVPE system

The first in Russia standard industrial MOVPE system the Aixtron AIX2000 HT (Germany) intended for epitaxial growth of the heterostructures based on the III-N was launched into operation at the Ioffe Institute in the 2002-2003.

External view of the AIX2000 HT MOVPE system

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