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The group of MOVPE epitaxy and investigations of the properties of nano-heterostructures based on group III nitrides
Equipment for epitaxial growth by the MOVPE method
The Epiquip VP-50 RP MOVPE system
The laboratory setup Epiquip VP-50 RP with MOVPE horizontal reactor of small size designed for epitaxy on a single substrate of arbitrary shape with a diameter of up to 2 inches (1 × 2 ") was significantly modernized in 1995 for research work. The Epiquip VP-50 RP MOVPE system was optimized for epitaxial growth of the heterostructures based on InAlGaN materials system.
External view of the Epiquip VP-50 RP MOVPE system
The main features of the Epiquip VP-50 RP MOVPE system:
Horizontal quartz reactor.
Graphite susceptor without substrate rotation system.
Inductive heating in the rage 300-1150°С, with accuracy of temperature maintenance 0.1°С.
Reactor work pressure in the range from 50 to 1100 mbar.
Slight influence of the parasitic reactions in the gas phase on growth processes.
In-situ optical reflectometry system for the real time control of the thicknesses, growth rate of the layers and planarity of the surface of the heterostructures.
Personal computer-aided epitaxial growth process control system, developed by laboratory employees.
